LED Package Wavelength Conversion Layer Orientation Angle
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Solution Overview
Problem
Semiconductor light emitting devices face limitations in luminous efficiency and light orientation angle, particularly in high-current and high-output applications, where improving light emission characteristics such as color quality and orientation angle is essential.
Innovation Solution
A semiconductor light emitting device package is designed with a light emitting diode (LED) chip having electrodes and a wavelength conversion layer on its side surfaces and upper surface, which includes a dam structure to prevent wavelength conversion material from permeating the upper surface, utilizing materials like SiO2 and SiN for reflectivity and a thermosetting resin for adhesion and heat resistance, allowing for a wider orientation angle of light emission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a wavelength conversion layer is applied only on the upper surface of the LED chip, then the manufacturing process is simple, but the light orientation angle is limited and color quality is poor
Solution Approach 1:
The patent extends the wavelength conversion layer from the traditional single upper surface application to a multi-dimensional configuration covering the upper surface and side surfaces of the LED chip. This dimensional expansion allows light emitted from all directions (upper and lateral) to undergo wavelength conversion, thereby increasing the light orientation angle to ≥140° while maintaining color consistency across different emission angles.
Solution Approach 2:
The wavelength conversion layer is segmented into multiple application zones: an upper surface layer and side surface layers. The side surface layers are applied to the lateral surfaces of the LED chip, creating distinct conversion zones that work together to broaden the emission pattern. This segmentation enables independent optimization of light conversion in different spatial directions.
2Ease of manufacture
If the wavelength conversion material is allowed to permeate the upper surface freely, then the application process is simple, but the color consistency and quality deteriorate
Solution Approach 1:
A dam structure is constructed around the peripheral surface of the LED chip before applying the wavelength conversion material. This dam structure acts as a preliminary barrier that prevents the wavelength conversion material from permeating onto the upper surface during the application process. By establishing this protective barrier in advance, the patent ensures that the upper surface and side surfaces receive controlled, separate applications of the conversion material, maintaining precise color consistency.
Solution Approach 2:
The dam structure serves as an intermediary element between the wavelength conversion material and the LED chip's upper surface. It mediates the material application process by allowing the material to be applied to the side surfaces while blocking its migration to the upper surface. This intermediary structure enables independent control of material distribution in different zones.
3Stability of the object's composition
If a dam structure is added to control material distribution, then color quality improves, but the device complexity increases
Solution Approach 1:
The dam structure is implemented as a thin film or coating applied to the peripheral surface of the LED chip, rather than a bulky three-dimensional structure. This thin-film approach provides effective material containment while minimizing additional volume and structural complexity. The dam can be formed as a conformal coating that follows the chip's geometry, integrating smoothly into the existing package design.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the orientation angle of light emission to greater than or equal to 140° and maintains color consistency, improving the color quality of emitted light by using a wavelength conversion layer on both side and upper surfaces of the LED chip, thereby addressing the limitations of existing semiconductor light emitting device packages.
Implementation Method 1
a wavelength conversion layer disposed on side surfaces of the LED chip, the wavelength conversion layer containing a wavelength conversion material
Implementation Method 2
utilizing materials like SiO2 and SiN for reflectivity
Data Source
AI summary
A semiconductor light emitting device package is provided and includes a light emitting diode (LED) chip including a first electrode and a second electrode, the LED chip having a first surface on which the first electrode and the second electrode are disposed, and a second surface opposing the first surface; a dam structure disposed on the first surface, an outside edge of the dam structure being co-planar with an outside edge of the LED chip; and a wavelength conversion layer disposed on side surfaces of the LED chip, the second surface of the LED chip, and a surface of the dam structure, the wavelength conversion layer containing a wavelength conversion material.