Oxide-Bypassed Lateral High Voltage Structures
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Solution Overview
Problem
Existing semiconductor devices face challenges in switching high voltages while maintaining compatibility with integrated circuit fabrication techniques, particularly in achieving low on-resistance and easy fabrication of high-voltage power devices.
Innovation Solution
The development of an oxide-bypassed lateral high voltage structure with field-shaping trench electrodes capacitively coupled to the voltage-withstand region of a lateral semiconductor device, which includes tapered voltage-withstand regions and trench electrodes to improve on-state conductivity and process compatibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional high-voltage device structures are used, then breakdown voltage is achieved, but on-resistance is high and fabrication complexity increases
Solution Approach 1:
The device structure is segmented into distinct functional regions: a voltage-withstand region with specific doping concentration and depth, and a separate drift region. This segmentation allows each region to be optimized independently for its specific function while simplifying the overall fabrication process through standardized region definitions.
Solution Approach 2:
Different regions of the device are assigned different doping concentrations and geometrical characteristics tailored to their specific functions. The voltage-withstand region has higher doping concentration than the drift region, and the gate structure has varying depth across different regions, optimizing local electrical properties for breakdown voltage and on-resistance reduction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances on-resistance and facilitates the easy fabrication of integrated power devices, allowing for high breakdown voltages without requiring special termination and enabling the stacking of devices for higher operating voltages while maintaining high on-state conductivity.
Implementation Method 1
trench electrodes which are capacitively coupled to sidewalls of said voltage-withstand structure to provide electric field shaping therein
Data Source
AI summary
A lateral high-voltage active device structure, in which field-shaping trench electrodes are capacitively coupled to the voltage-withstand region near the source end thereof.