Silicon Avalanche LED With Segmented Junctions for 650nm Emission
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Solution Overview
Problem
Existing Silicon avalanche LEDs face challenges in achieving high intensity light output while maintaining low cost and efficiency, and there is a need for a novel light emitting device that can effectively generate 650nm optical emissions for diverse applications including on-chip optical communication and data processing.
Innovation Solution
A Silicon avalanche light emitting device is designed with strategically placed dopant and impurity concentrations to enhance 650nm optical emission, featuring a reverse-biased p+n junction and a forward-biased np+ junction, where high energy electrons interact with low energy holes to stimulate recombination and photon generation, with optimized bias conditions and carrier engineering to maximize emission intensity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If conventional silicon LED structures are used, then manufacturing cost is reduced, but light emission intensity is insufficient
Solution Approach 1:
The device is divided into multiple functional regions including a first junction region for carrier injection, a second junction region for light emission, and intermediate regions with specific doping profiles. This segmentation allows each region to be optimized for its specific function, achieving high light intensity while maintaining compatibility with standard silicon processing
Solution Approach 2:
Different regions of the silicon substrate are doped with different doping kinds and concentrations to create localized functional zones. The first junction region has one doping profile optimized for carrier injection, while the second junction region has another doping profile optimized for radiative recombination, enabling high intensity emission at specific locations
2Use of energy by moving object
If avalanche mode operation is implemented, then light emission efficiency is improved, but device reliability deteriorates due to thermal damage
Solution Approach 1:
A carefully engineered intermediate region with specific doping characteristics is placed between the avalanche injection region and the light emission region. This intermediate region acts as a mediator that allows high-energy carriers from avalanche breakdown to be converted into lower-energy carriers suitable for radiative recombination, reducing thermal damage while maintaining emission efficiency
Solution Approach 2:
The device operates by changing the bias conditions to achieve avalanche breakdown at the first junction, which generates high-energy carriers. These carriers then travel through the intermediate region where their energy is moderated, allowing efficient light emission at the second junction without the full thermal damage that would occur from direct avalanche operation at the emission site
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves high intensity 650nm photon emission, suitable for low-loss waveguide propagation and free space communication, with enhanced modulation capability and reduced thermal damage, offering a viable solution for future on-chip optical communication and data processing.
Implementation Method 1
a first junction region for injecting high energy carriers... The device is configured so that a first depletion region associated with the reverse biased first junction region punches through to a second depletion region
Implementation Method 2
a second junction region for injecting low energy carriers in a second direction opposite to the first direction
Implementation Method 3
recombination mechanisms and photonic generation processes is stimulated in the interaction zone between the high energy electrons and the low energy holes
Data Source
Figure 1a~1c
Figure 2
Figure 3
AI summary
The invention provides a silicon pn based device with different dopant and impurity implanted concentrations strategically placed in the device, the pn junction being reverse biased, such that the 650nm optical emission is stimulated and enhanced. The invention extends to a silicon avalanche light emitting device comprising a first junction and a second junction, said first junction including a reverse biased excitation zone for injecting high energy carriers in a first direction and said second junction being forward biased so as to inject high density low energy carriers opposite to said first direction, wherein an interaction zone is formed between said first junction and said second junction so as to enhance emission of 650nm photons through interactions between said high energy carriers and said low energy carriers.