Guard Ring Structure for High-Voltage Isolation
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Solution Overview
Problem
Coreless transformers face reliability issues due to low high-voltage robustness and dielectric isolation strength, particularly in DC-DC converters and electric drives, where dielectric breakdown can create conductive paths between coils and guard rings, and the effects of processing and environmental conditions on dielectric isolation are not well understood.
Innovation Solution
The semiconductor structure incorporates an outer guard ring at a different voltage than the conductive feature and an inner guard ring electrically coupled to the conductive feature, which alleviates the electric field through the contaminated dielectric layer, preventing current flow and maintaining dielectric strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single guard ring configuration is used, then the structure is simple, but the dielectric isolation strength is insufficient and high voltage robustness is low
Solution Approach 1:
The guard ring structure is segmented into multiple regions with different voltage potentials. The contamination protection guard ring is held at a different voltage than the signal guard ring, creating distinct electrical zones that segment the electric field distribution and prevent breakdown paths through contaminated regions.
Solution Approach 2:
The signal guard ring is maintained at the same voltage potential as the conductive feature, creating an equipotential region that eliminates lateral electric fields. This equipotential configuration prevents current flow through contaminated dielectric regions while maintaining necessary electrical isolation.
2Length of stationary object
If guard rings are placed close to conductive features, then isolation distance is reduced, but dielectric breakdown risk increases due to lateral electric fields in contaminated regions
Solution Approach 1:
The signal guard ring is maintained at the same voltage potential as the conductive feature, creating an equipotential region that eliminates lateral electric fields. This allows the guard ring to be positioned closer to the conductive feature without increasing breakdown risk, as no electric field exists laterally through the contaminated dielectric region.
3Reliability
If conventional single-voltage guard ring is used, then manufacturing is simpler, but lateral electric fields cause dielectric breakdown in contaminated regions
Solution Approach 1:
The guard ring structure is segmented into multiple regions with different voltage potentials. The contamination protection guard ring is held at a different voltage than the signal guard ring, creating distinct electrical zones that segment the electric field distribution and prevent breakdown paths through contaminated regions.
Solution Approach 2:
The signal guard ring is maintained at the same voltage potential as the conductive feature, creating an equipotential region that eliminates lateral electric fields. This equipotential configuration prevents current flow through contaminated dielectric regions while maintaining necessary electrical isolation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the reliability of semiconductor structures by eliminating lateral electric fields within the contaminated region, thereby maintaining dielectric strength and preventing current flow, thus improving the robustness of high-voltage isolation.
Implementation Method 1
there is substantially no lateral electric field within the contaminated portion
Data Source
AI summary
One or more embodiments related to a semiconductor structure, comprising: a conductive feature; an outer guard ring; and an inner guard ring between the outer guard ring and the conductive feature, the inner guard ring being electrically coupled to the conductive feature.