Guard Ring Poly Gate ESD Protection Layout Optimization
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Solution Overview
Problem
Existing semiconductor devices face challenges in effectively implementing electrostatic discharge protection due to the susceptibility of thin gate oxide films, particularly in minimizing the capacitor and resistor regions required for gate coupling in Gate-Coupled NMOS (GCNMOS) devices, which affects layout efficiency and functionality.
Innovation Solution
The semiconductor device incorporates a well region, guard ring region, insulating layer, and poly gate structure with a bulk region and buried impurity layers, allowing for the application of bias voltages to optimize electrostatic discharge protection by utilizing parasitic capacitance between the guard ring poly gate and well regions, reducing the need for additional capacitor and resistor areas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If additional capacitor and resistor are added to the protection circuit, then electrostatic discharge protection performance is improved, but layout region consumption increases
Solution Approach 1:
The patent merges the coupling capacitor function with the guard ring structure by forming the guard ring poly gate adjacent to the well region. This integration eliminates the need for separate capacitor components while maintaining the gate coupling effect for ESD protection, thereby reducing layout area consumption.
Solution Approach 2:
The guard ring poly gate serves multiple functions: it acts as both the guard ring structure for substrate protection and as the coupling capacitor plate for gate coupling. This multi-functionality reduces the total component count and layout area while maintaining ESD protection performance.
2Reliability
If coupling capacitor and resistor are added to GCNMOS device, then electrostatic discharge protection is enhanced, but device complexity increases
Solution Approach 1:
The patent combines the coupling capacitor function with the guard ring poly gate structure, eliminating the need for separate capacitor and resistor components. This merging reduces circuit complexity while maintaining ESD protection functionality through the inherent parasitic capacitance and resistance of the integrated structure.
Solution Approach 2:
The guard ring poly gate and well region structure inherently provides both the coupling capacitance and resistance needed for ESD protection without requiring additional external components. The structure serves itself by utilizing its own physical properties for protection functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the semiconductor device's ability to rapidly respond to electrostatic discharges by applying a low-voltage bias, minimizing the impact on the internal circuit and reducing the overall chip size by integrating the coupling capacitor within the guard ring region, thus improving protection efficiency and layout optimization.
Implementation Method 1
an insulating layer, and a poly gate. The insulating layer is disposed, around the perimeter of the well region, on the guard ring region. The poly gate is disposed, around the perimeter of the well region, on the insulating layer.
Implementation Method 2
utilizing parasitic capacitance between the guard ring poly gate and well regions, reducing the need for additional capacitor and resistor areas
Data Source
AI summary
A semiconductor device includes a P-type substrate, a P-type well region, an N-type well region, an N-type guard ring region, an insulating layer, a poly gate disposed, and a bulk region. The P-type well region is disposed on the P-type substrate and includes source regions and drain regions each spaced apart from the other. The N-type well region disposed and spaced apart from the P-type well region on the P-type substrate. The N-type guard ring region is disposed around perimeters of the P-type well region and the N-type well region. The insulating layer is disposed around the P-type well region and the N-type well region on the N-type guard ring region. The poly gate is disposed around the perimeter of the P-type well region and the N-type well region, respectively, on the insulating layer. The bulk region is disposed on the N-type guard ring region adjacent the poly gate.