Guard-Ring Semiconductor Device With Multi-Layer Doping
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Solution Overview
Problem
Semiconductor wafers are prone to physical damage and electro-magnetic interference during fabrication, which can lead to permanent damage due to cracks and water diffusion through the scribe line region during sawing.
Innovation Solution
A semiconductor device with a guard-ring region surrounding the chip region, incorporating a MOS capacitor with multiple doping layers of the same conductivity type but different concentrations, along with wire layers and isolation layers, to protect against physical damage and electro-static discharge.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a guard-ring region is added to protect the chip region, then reliability against physical damage and EMI is improved, but device complexity increases
Solution Approach 1:
The substrate is divided into a chip region and a separate guard-ring region, with the guard-ring region acting as a protective buffer zone surrounding the chip region. This segmentation isolates the sensitive chip area from external threats while maintaining a clear functional distinction between active and protective zones.
Solution Approach 2:
The guard-ring region serves as an intermediary protective layer between external harmful factors (physical damage, EMI, ESD) and the chip region. It absorbs and dissipates harmful effects before they can reach the sensitive semiconductor devices, acting as a mediator that protects without directly interfering with chip operation.
2Reliability
If multiple doping layers with different concentrations are used in the guard-ring region, then protection effectiveness against ESD and EMI is improved, but manufacturing precision requirements increase
Solution Approach 1:
The guard-ring region incorporates multiple doping layers with different doping concentrations (first doping concentration in the first doping layer, second doping concentration in the second doping layer) to create locally optimized protection zones. Each layer's specific doping concentration is tailored to address different aspects of ESD and EMI protection, with the second layer having higher doping concentration for enhanced field effect protection.
Solution Approach 2:
The patent utilizes changes in doping concentration as a key parameter to optimize protection effectiveness. By varying the doping concentration across different layers (from first doping concentration to second doping concentration), the structure achieves graded protection that effectively dissipates electrical stress and electromagnetic interference while maintaining manufacturability.
3Reliability
If the guard-ring region is designed to surround the entire chip region, then coverage and protection scope are improved, but area of the substrate is increased
Solution Approach 1:
The guard-ring region is merged with the chip region in a unified substrate structure, where the guard-ring region surrounds and integrates with the chip region rather than being a separate component. This merging approach provides comprehensive 360-degree protection coverage while efficiently utilizing substrate area through compact integration.
Solution Approach 2:
The protection structure extends into the vertical dimension with multiple doping layers stacked in the depth direction, allowing comprehensive protection coverage without proportionally increasing the horizontal substrate area. The multi-layer doping structure provides three-dimensional protection that maximizes coverage efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively protects semiconductor chips from physical damage, electro-magnetic interference, and electro-static discharge by utilizing the guard-ring region with specific doping layers and wire structures, enhancing the reliability and durability of the semiconductor device.
Implementation Method 1
A semiconductor device which can efficiently protect a semiconductor chip from physical damage, electro-magnetic interference (EMI), and electro static discharge (ESD)
Implementation Method 2
an isolation layer configured to define an active region within the guard-ring region
Data Source
AI summary
The semiconductor device including a substrate comprising a chip region and a guard-ring region which surrounds a side surface of the chip region, an isolation layer configured to define an active region within the guard-ring region, a first doping layer in the active region and doped with first impurities having a first doping concentration, a second doping layer on the first doping layer and in the active region, the second doping layer doped with second impurities having a same conductivity type as the first impurities of the first doping layer, the second impurities having a second doping concentration, the second doping concentration being greater than the first doping concentration, a first gate electrode on the second doping layer, and a first wire layer on the first gate electrode may be provided.