Semiconductor/Solid-State Device Details TRIZ Cases

A semiconductor package uses a recessed organic substrate to form double-sided electrodes without through-silicon vias.

Forming through-silicon vias directly through wafer-level chip scale packages to stack semiconductor components vertically.

Separating thermal and electrical paths in IC packages reduces junction temperature while maintaining signal integrity.

Liquid repellent film prevents resin coverage of electrode pads while air gaps block moisture permeation paths, ensuring reliable RF characteristics.

A protection layer and seal ring confine laser energy to prevent substrate damage and improve packaging density.

ZnO nanorods functionalize AlGaN/GaN transistor gates, enabling precise ammonia detection in high temperature industrial environments.

A semiconductor light-emitting element for flip-chip mounting uses a plated metal layer with a thickness of 3 to 30 micrometers.

A multi-conducting through hole structure places reference lines between signal lines on the inner surface of a substrate via hole.

Selective plating on an unplated leadframe reduces material costs while maintaining adhesion for external connectors.

Merging the via and conductor into one metal paste structure eliminates the physical interface, reducing parasitic resistance in stacked configurations.

Hermetically sealed packaging maintains an inert atmosphere around silicon carbide devices to limit threshold voltage shifts.

A semiconductor structure uses metallic pillars with protrusions and a capping layer to define precise interconnect geometries.

Vacuum grooves in a wafer bonding apparatus extract trapped air layers, preventing moisture condensation between wafers.

Ruthenium adhesion layers and hydrogen annealing fill voids in high aspect ratio features, resolving early pinch-off issues that reduce productivity.

Merged terminal and case structure eliminates separate conductive wires, resolving insufficient heat dissipation while reducing manufacturing complexity.

A coreless substrate uses plating conductive pillars to establish electrical connections without traditional fiberglass layers.

Replacing molding compound with a silicon substrate eliminates thermal expansion mismatch and warpage while improving heat dissipation in fan-out packaging.

A flexible interposer integrates a chemically deposited first redistribution layer with an additively manufactured second layer to support semiconductor devices.

A string contact structure couples clamp device terminals to pads using conductive layers.

Parallel conductive trace rings lower inductance in two-layer ball grid array packages, improving error vector magnitude without multi-layer costs.

A unitary spacer structure with a conductive core defines coolant passages between stacked active wafers.

Delay-time-difference sensing generates chip selection information to reduce pad count, minimizing package size and fabrication costs.

An anisotropic heat spreader channels heat from a source to disperse it evenly across fins, eliminating localized hot spots.

A composite column interconnect structure uses a lower modulus inner core and higher strength outer shell to enhance device reliability.

Interpenetrating drain-body protrusions lower channel-on resistance while maintaining high punch-through voltage without high-temperature diffusion.

A protective layer covers the dicing street during wafer dicing to prevent metal detachment and side surface damage, enhancing packaging yield.

Sealing parts overlap main and sub input lead lines to distribute bending stress, preventing circuit wiring cracks in flexible tape packages.

Glass core substrate with asymmetric copper layer counts enables efficient signal routing on the front side while reducing overall package thickness.

A semiconductor via structure uses an N-type region to form an inversion layer that shields adjacent circuits from electromagnetic interference.

A semiconductor wafer uses replicated integrated circuit modules linked by cross-wafer electrical connections to form customizable dies.

Rounded alignment marks in semiconductor packages eliminate sharp corners that cause stress concentration and cracking between dielectric layers.

A configurable metal layer connects to fixed first metal lines via second metal lines to enable flexible routing configurations.

Oversized filler particles in a second sealant block oxygen and moisture penetration, reinforcing impact resistance against substrate gaps.

A domain wall magnetic memory cell uses a bipolar junction transistor selector to reduce power consumption.

Direct intra-area terminal connections eliminate rewiring layers, reducing thickness while maintaining electrical connection control.

Fan-out wafer level packages integrate embedded ground planes into the molded body to eliminate costly backside redistribution layers and through package vias.

Varying pad densities in redistribution layers eliminate interposers to resolve the trade-off between packaging density and mechanical strength.

Multi-chip wafer level package integrates high voltage components using polymer mold compound and conductive vias.

A compensation element between housing and substrate stabilizes shape via thermal expansion differences.

Phase change material in the stress buffer absorbs perforation stress to prevent longitudinal cracking and protect against contaminants.

Air gap exclusion areas control void placement between semiconductor interconnects to minimize parasitic capacitance.

Ar sputtering removes native oxide before CVD barrier deposition to prevent voids in high aspect ratio semiconductor vias.