Semiconductor Resistor Formation Using Shared Mask Etching
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Solution Overview
Problem
The existing manufacturing methods for semiconductor devices with multiple types of resistors on a single substrate require complex processes, involving multiple masks and etching steps, which increases the number of manufacturing processes and costs.
Innovation Solution
A semiconductor device design where the first and second resistance metal films are made of the same material, and the second resistance metal films are made of the same material, allowing for the formation of both resistors in a single etching process using a shared mask, reducing the complexity and number of manufacturing steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If different types of resistors are fabricated in different layers, then each resistor can be formed with optimized structure, but the manufacturing process becomes complex with multiple masks and etching steps
Solution Approach 1:
The patent merges multiple resistor types into a single layer structure by forming first and second resistance metal films with different sheet resistances in the same layer. This allows both resistors to be fabricated simultaneously using a single mask and etching process, eliminating the need for multiple layers and reducing manufacturing complexity while maintaining the stability benefits of optimized resistor structures
Solution Approach 2:
The patent creates a universal layer structure that can serve multiple functions by forming both first and second resistance metal films in the same layer. This single layer simultaneously provides different resistance values through different materials or structures, allowing the same layer to fulfill multiple resistor type requirements without needing separate dedicated layers for each resistor type
2Manufacturing precision
If a mask is formed for each type of resistor, then precise patterning can be achieved, but the number of manufacturing processes increases
Solution Approach 1:
The patent combines the patterning of multiple resistor types into a single mask formation and etching process. By designing the mask pattern to define both first and second resistance metal film regions simultaneously, the patent achieves precise patterning for both resistor types in one operation, eliminating the need for separate mask and etching steps for each resistor type and thereby improving manufacturing efficiency
Data Source
AI summary
A semiconductor device (1) includes a first metal wiring layer (11) formed on a substrate (10), an interlayer insulating film (12) formed on the first metal wiring layer (11), a second metal wiring layer (23) formed on the interlayer insulating film (12), a first resistor including a first resistance metal film (14a) formed between the first metal wiring layer (11) and the second metal wiring layer (23), a first insulating film (15a) formed on the first resistance metal film (14a), and a second resistance metal film (16a) formed on the first insulating film (15a), and a second resistor including a first resistance metal film (14b) formed between the first metal wiring layer (11) and the second metal wiring layer (23), a first insulating film (15b) formed on the first resistance metal film (14b), and a second resistance metal film (16b) formed on the first insulating film (15b).