Semiconductor Singulation via Self-Adjusting Grid Trenches
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Solution Overview
Problem
In the production of semiconductor components, a significant portion of the semiconductor body composite is lost due to the need for wide trenches between components, which are designed to accommodate adjustment tolerance distances, leading to inefficiencies and material waste.
Innovation Solution
A method involving the formation of a grid structure through separating trenches in a base body, followed by direct bonding with a semiconductor body composite, where the trenches are formed in a way that allows for self-adjusting singulation without additional lithography steps, reducing material loss and increasing efficiency by minimizing defect surfaces and internal mechanical stresses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wide trenches are designed between semiconductor bodies to accommodate adjustment tolerance distances, then the reliability of component separation is improved, but a considerable portion of the semiconductor body composite is lost
Solution Approach 1:
The separating trenches are designed to automatically adjust their width during the singulation process to match the actual dimensions of the semiconductor bodies, eliminating the need for pre-designed wide trenches with adjustment tolerance distances. The trenches self-adjust to the exact required width, minimizing material loss while ensuring reliable separation.
Solution Approach 2:
The width of the separating trenches is changed from fixed pre-designed dimensions to dynamically adjustable dimensions that adapt to the actual semiconductor body dimensions. This parameter change allows the trenches to be as narrow as possible while still providing reliable separation, thereby reducing material loss.
2Manufacturing precision
If additional lithography steps are performed to define trench positions with adjustment tolerance, then the manufacturing precision is improved, but the device complexity and production time increase
Solution Approach 1:
The system uses the semiconductor bodies themselves as reference elements for defining trench positions. The trenches automatically position themselves relative to the actual body locations without requiring separate lithography steps to define positions with adjustment tolerances. This self-service approach achieves precise trench positioning while simplifying the manufacturing process.
Solution Approach 2:
The semiconductor bodies are first grown epitaxially on the substrate in their final positions, and then the separating trenches are formed based on these pre-positioned bodies. This preliminary action of placing bodies before defining trenches eliminates the need for complex lithography steps to determine body positions and adjustment tolerances.
3Productivity
If the semiconductor body composite is singulated before substrate detachment, then the production efficiency is improved, but the risk of delamination and mechanical damage increases
Solution Approach 1:
The separating trenches are formed and the singulation process is initiated while the composite is still supported by the substrate. The substrate provides mechanical support during the singulation process, preventing delamination and damage. Only after the trenches are formed and the structure is stabilized is the substrate detached, thus maintaining both production efficiency and component integrity.
Solution Approach 2:
The substrate acts as a cushioning support during the singulation process. By maintaining the substrate connection during trench formation and initial separation, the system protects the semiconductor bodies from mechanical damage and delamination. The substrate provides structural reinforcement that is removed only after the singulation is complete and safe.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the production efficiency by minimizing material loss and defect surfaces, allowing for the production of components with reduced structural heights and improved mechanical stability, while eliminating the need for adjustment tolerance distances and reducing the risk of delamination.
Implementation Method 1
For forming a joint composite the wafer composite and the carrier composite are connected to one another
Data Source
AI summary
The invention relates to a method for producing a plurality of components (100), wherein a carrier composite (10) is provided with a coherent base body (13) and a wafer composite (200) is provided with a coherent semiconductor body composite (20) and a substrate (9). The wafer composite is connected to the carrier composite to form a common composite. In a subsequent method step, a plurality of separation channels (60) are generated at least through the base body (13) to form a grid structure (6), which determines the dimensions of the components (100) to be produced. A passivation layer (61) is shaped in such a way that it covers the side surfaces of the separation channels (60). Finally, the common composite is separated, wherein the substrate (9) is removed from the semiconductor body composite (20) and the common composite is separated along the separation channels (60) to form a plurality of components (100).