Semiconductor Contact Pad Degradation Prevention Structure

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Solution Overview

Problem

Semiconductor devices face degradation issues such as corrosion and chemical reactions at contact pads, leading to reliability and yield concerns during manufacturing and reduced lifetime.

Innovation Solution

Incorporating a degradation prevention structure laterally surrounding the interface region between the contact pad and bond structure, which can comprise a trench filled with solid dielectric material, a solid dielectric material structure, or an electrically conductive layer, to prevent the propagation of degradation processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If bond structure is attached directly to contact pad structure, then electrical connectivity is achieved, but degradation processes such as corrosion and chemical reactions occur at the interface region

Engineering Contradiction:

ImprovereliabilityVSAvoiddegradation processes

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A degradation prevention structure is introduced as an intermediary element between the bond structure and the contact pad structure. This intermediate layer laterally surrounds the interface region and vertically positions itself between the bond structure and contact pad structure, preventing direct harmful interactions while maintaining electrical connectivity through the enclosed interface region.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The interface region is segmented into an enclosed interface region (for electrical connectivity) and a peripheral region (isolated by the degradation prevention structure). This segmentation allows the harmful degradation processes to be confined to or prevented from affecting the critical electrical interface while maintaining the bonding function.

Inventive Principle:

Principle #1Segmentation

2Reliability

If degradation prevention structure is added laterally surrounding the interface region, then reliability is improved, but device complexity increases

Engineering Contradiction:

ImprovereliabilityVSAvoiddevice complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The degradation prevention structure is implemented as a thin film or layer that laterally surrounds the interface region. This thin-film approach provides effective degradation protection without adding significant structural complexity or volume to the device, maintaining simplicity while improving reliability.

Inventive Principle:

Principle #30Flexible shells and thin films

3Reliability

If degradation prevention structure is positioned vertically between bond structure and contact pad structure, then degradation propagation is prevented, but manufacturing precision requirements increase

Engineering Contradiction:

ImprovelifetimeVSAvoidmanufacturing precision

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The degradation prevention structure is formed in advance before the bond structure is attached to the contact pad structure. This preliminary formation allows the structure to be precisely positioned and integrated into the manufacturing process flow, reducing the precision requirements during subsequent bonding operations.

Inventive Principle:

Principle #10Preliminary action

Data Source

PatentUS10867893B2Semiconductor devices and methods for forming a semiconductor device

Publication Date: 2020.12.15 INFINEON TECHNOLOGIES AG

AI summary

A semiconductor device includes an electrically conductive contact pad structure. Moreover, the semiconductor device includes a bond structure. The bond structure is in contact with the electrically conductive contact pad structure at least at an enclosed interface region. Additionally, the semiconductor device includes a degradation prevention structure laterally surrounding the enclosed interface region. The degradation prevention structure is vertically located between a portion of the bond structure and a portion of the electrically conductive contact pad structure.