Unitary Spacer Structure for 3D Wafer Thermal Management
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Standard CMOS technology has reached performance limits, and 3D integration in semiconductor devices faces challenges in heat removal due to increased thermal resistance from additional layers, especially when stacking high-power devices, as Through Silicon Vias (TSVs) restrict coolant channel size, limiting effective coolant flow.
Innovation Solution
The implementation of a unitary electrical communication and spacer structure with an electrically conductive core between adjacently stacked active wafers, which provides electrical communication and defines coolant passages, allowing for improved coolant circulation and heat dissipation by forming channels between the wafers and the spacer structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If Through Silicon Vias (TSVs) are used for 3D integration, then electrical communication between stacked wafers is achieved, but coolant channel size is limited and heat removal efficiency deteriorates
Solution Approach 1:
The interconnect structure is segmented into multiple functional regions: an electrically conductive core for electrical communication, an electrically insulating layer for isolation, and a non-conductive spacer structure for mechanical support and coolant channel formation. This segmentation allows each component to optimize its specific function without compromising the others.
Solution Approach 2:
The unitary interconnect structure serves multiple functions simultaneously: providing electrical communication through the conductive core, electrical isolation through the insulating layer, mechanical spacing and structural support through the non-conductive spacer, and defining coolant flow paths. This multi-functionality resolves the contradiction by integrating previously separate functions into a single unified structure.
2Productivity
If additional layers are stacked for 3D integration, then system bandwidth and integration density are improved, but thermal resistance increases and heat removal becomes difficult
Solution Approach 1:
The non-conductive spacer structure acts as an intermediary element that provides thermal management functionality. It creates dedicated coolant channels that allow efficient heat removal from each stacked wafer, preventing thermal accumulation while maintaining the high integration density required for high bandwidth communication.
Solution Approach 2:
The invention incorporates hydraulic cooling by forming channels within the non-conductive spacer structure that allow coolant flow. This hydraulic approach to thermal management enables efficient heat removal from multiple stacked layers, resolving the thermal resistance issue that arises with increased integration density.
3Manufacturing precision
If TSV channel size is reduced for advanced process nodes, then electrical interconnect precision is improved, but coolant flow capacity is limited
Solution Approach 1:
The interconnect structure is segmented into multiple functional regions: an electrically conductive core for electrical communication, an electrically insulating layer for isolation, and a non-conductive spacer structure for mechanical support and coolant channel formation. This segmentation allows each component to optimize its specific function without compromising the others.
Solution Approach 2:
The invention transitions from two-dimensional planar interconnects to three-dimensional vertical stacking with integrated coolant channels. The non-conductive spacer structure extends in the vertical dimension, creating channels that provide adequate coolant flow capacity while maintaining precise electrical interconnects through the TSVs in the horizontal plane.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances heat removal efficiency in 3D integrated semiconductor devices by enabling larger coolant passages and effective coolant flow, addressing the thermal challenges associated with stacked high-power devices.
Implementation Method 1
an electrically conductive material core providing electrical communication to the at least one through silicon via (TSV) structure
Implementation Method 2
The coolant passages are defined between surfaces of the adjacently stacked active wafers and the at least one unitary electrical communication and spacer structure
Data Source
AI summary
An electrical device that includes at least two active wafers having at least one through silicon via, and at least one unitary electrical communication and spacer structure present between a set of adjacently stacked active wafers of the at least two active wafers. The unitary electrical communication and spacer structure including an electrically conductive material core providing electrical communication to the at least one through silicon via structure in the set of adjacently stacked active wafers and a substrate material outer layer. The at least one unitary electrical communication and spacer structure being separate from and engaged to the adjacently stacked active wafers, wherein coolant passages are defined between surfaces of the adjacently stacked active wafers and the at least one unitary electrical communication and spacer structure.