Semiconductor Device Adhesion Portion Crack Prevention

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Solution Overview

Problem

Semiconductor devices with multilayer electrodes experience cracks in the first metal layer due to insufficient adhesive strength between the oxidation inhibition layer and the second protection film, leading to solder wetting and spreading, which can cause further separation and increase the risk of crack formation.

Innovation Solution

Incorporating an adhesion portion with higher adhesive strength than the oxidation inhibition layer to the second protection film's peripheral portion, which serves as an anchor, preventing separation and reducing solder wetting and spreading, thereby suppressing crack occurrence in the first metal layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the oxidation inhibition layer is used to cover the second metal layer, then oxidation resistance is improved, but adhesive strength to the second protection film becomes insufficient

Engineering Contradiction:
Improveoxidation resistanceVSAvoidadhesive strength
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The patent introduces an adhesion promotion layer as an intermediary between the oxidation inhibition layer and the second protection film. This intermediate layer has high adhesion to both adjacent layers, serving as a mediator that transfers and distributes stress, preventing direct separation between the oxidation inhibition layer and the second protection film while maintaining the oxidation resistance function of the oxidation inhibition layer.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If the second protection film covers the oxidation inhibition layer, then protection is improved, but separation occurs due to insufficient adhesion

Engineering Contradiction:
ImproveprotectionVSAvoidseparation
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

The adhesion promotion layer acts as a mediator between the second protection film and the oxidation inhibition layer, providing strong bonding to both. This intermediate layer prevents separation by distributing mechanical stresses and maintaining the structural integrity of the stacked configuration, allowing the second protection film to effectively protect the underlying layers without delamination.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Reliability

If solder is applied to the electrode, then electrical connection is improved, but solder wetting and spreading causes crack formation

Engineering Contradiction:
Improveelectrical connectionVSAvoidcrack resistance
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The patent applies beforehand cushioning by creating a stacked configuration with multiple layers (second metal layer, oxidation inhibition layer, second protection film, and adhesion promotion layer) before solder application. This multi-layer structure acts as a cushion that distributes and absorbs the mechanical stress from solder wetting and spreading, preventing stress concentration that would otherwise cause cracks in the first metal layer or electrode structure.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The adhesion portion effectively restricts solder wetting and spreading, reducing the thickness of solder and preventing cracks in the first metal layer, while maintaining heat radiation performance and simplifying the manufacturing process.

Implementation Method 1

an adhesion portion adhering to a portion of a lower surface of an opening peripheral portion of a second protection film with an excellent adhesive strength to the second protection film

Methodology Applied
Scientific EffectAdhesion: Adhesive

Data Source

PatentUS11362012B2Semiconductor device
Publication Date: 2022.06.14 DENSO CORP
  • US11362012B2 patent drawing
  • US11362012B2 patent drawing
  • US11362012B2 patent drawing

AI summary

In a semiconductor device, a first protection film covers an end portion of a first metal layer disposed on a semiconductor substrate, and has a first opening above the first metal layer. A second metal layer is disposed on the first metal layer in the first opening. An oxidation inhibition layer is disposed on the second metal layer in the first opening. A second protection film has a second opening and covers an end portion of the oxidation inhibition layer and the first protection film. The second protection film has an opening peripheral portion on a periphery of the second opening, and covers the end portion of the oxidation inhibition layer. An adhesion portion adheres to a portion of a lower surface of the opening peripheral portion. The adhesion portion has a higher adhesive strength with the second protection film than the oxidation inhibition layer.