Hall Plate Sensitivity via Ultra-Thin Sputtering
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Solution Overview
Problem
Current Hall Effect magnetic field sensing elements lack sufficient sensitivity due to limitations in carrier concentration and thickness of the Hall plate material.
Innovation Solution
A Hall plate with a thickness of 0.5 nanometers to 100 nanometers and a carrier concentration of 10^19 to 10^26 carriers/cm^3, made from materials like copper oxide, is fabricated using a sputtering process with an adhesion layer and passivation, enhancing sensitivity by a factor of ten to a thousand compared to existing elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the Hall plate thickness is increased to improve signal strength, then the sensitivity should improve, but the carrier concentration decreases and sensitivity deteriorates
Solution Approach 1:
The patent applies parameter changes by optimizing the thickness of the Hall plate to a specific range (5nm-100nm) and controlling the carrier concentration within 10^19 to 10^26 carriers/cm³. This resolves the contradiction by identifying the optimal parameter window where both sufficient thickness for signal generation and adequate carrier concentration for sensitivity are simultaneously achieved.
Solution Approach 2:
The patent employs composite material structures including the Hall plate formed from metal oxides or metal nitrides combined with adhesion layers (such as titanium nitride) and passivation layers. This composite approach allows the Hall plate to achieve enhanced sensitivity through material composition optimization while maintaining structural integrity and electrical properties.
2Measurement precision
If a thin Hall plate is used to maintain high carrier concentration, then sensitivity improves, but the Hall plate becomes too thin to fabricate and handle
Solution Approach 1:
The patent resolves fabrication difficulty by establishing the thickness parameter within 5nm-100nm, which is thin enough to maintain high carrier concentration and sensitivity but thick enough to be manufacturable using conventional semiconductor fabrication techniques including sputtering, chemical vapor deposition, and lithography.
Solution Approach 2:
The patent introduces adhesion layers (such as titanium nitride) as intermediary structures between the substrate and the thin Hall plate. These adhesion layers provide mechanical support and handling stability to the ultra-thin Hall plate while not significantly interfering with the Hall effect sensing function, thereby enabling fabrication and integration of very thin sensitive structures.
3Measurement precision
If conventional materials are used in the Hall plate, then fabrication is straightforward, but sensitivity is insufficient
Solution Approach 1:
The patent employs composite material structures including the Hall plate formed from metal oxides or metal nitrides combined with adhesion layers (such as titanium nitride) and passivation layers. This composite approach allows the Hall plate to achieve enhanced sensitivity through material composition optimization while maintaining structural integrity and electrical properties.
Solution Approach 2:
The patent applies parameter changes by optimizing the thickness of the Hall plate to a specific range (5nm-100nm) and controlling the carrier concentration within 10^19 to 10^26 carriers/cm³. This resolves the contradiction by identifying the optimal parameter window where both sufficient thickness for signal generation and adequate carrier concentration for sensitivity are simultaneously achieved.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The improved Hall plate significantly increases the sensitivity of Hall Effect sensing elements, allowing for more precise magnetic field detection, with the Hall Voltage being proportional to the magnetic field strength.
Implementation Method 1
Hall Effect magnetic field sensing elements are known... Hall Effect element includes a so-called 'Hall plate'... Hall Voltage being proportional to the magnetic field strength
Implementation Method 2
the Hall plate is fabricated such that it has a thickness of .5 nanometers to 100 nanometers... fabricated using a sputtering process
Data Source
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AI summary
In one aspect, a Hall Effect sensing element (100) includes a Hall plate (114) having a thickness less than about 100 nanometers an adhesion layer (110) directly in contact with the Hall plate and having a thickness in a range about 0.1 nanometers to 5 nanometers. In another aspect, a sensor includes a Hall Effect sensing element. The Hall Effect sensing element (100') includes a substrate (102) that includes one of a semiconductor material or an insulator material, an insulation layer (106) in direct contact with the substrate, an adhesion layer (110) having a thickness in a range of about.1 nanometers to 5 nanometers and in direct contact with the insulation layer and a Hall plate (114) in direct contact with the adhesion layer and having a thickness less than about 100 nanometers.