Galvano-Magnetic Material Selection TRIZ Cases
- 3D Memory Cell Structure With Separated Vertical Channel Patterns
Separated vertical channel patterns and surrounding conductive stacks raise 3D memory density while preserving memory string selection and control.
- MRAM MTJ Iridium Layer Stack for Tunneling Barrier Protection
Iridium-containing seed, spacer, and barrier layers suppress metal diffusion into the tunneling barrier and preserve MTJ film structure in MRAM.
- MRAM Bottom Electrode Structure for MTJ Patterning Reliability
A slanted bottom electrode and extended dielectric layer protect the MTJ stack during etching, improving MRAM alignment and switching reliability.
- Beveled MTJ Pillar Structure for Void-Free ILD Fill
Beveled MTJ layers and encapsulation lower pillar aspect ratio, prevent ILD voids, and reduce top contact shorts in MRAM.
- MTJ Shielding Structure for External Magnetic Field Deflection
A soft-magnetic shielding layer deflects external fields from the MTJ stack, improving coercivity, durability, and reflow bit error performance.
- Folded SOT MRAM Stack for Thermal Stability and TMR Retention
A seed-backed pinned layer and PMA capping layer help folded SOT MRAM preserve thermal stability, free-layer retention, and TMR.
- MRAM Cell Structure With Dielectric Liners for Tunnel Barrier Integrity
A multistage MRAM cell process uses dielectric liners and delayed tunnel barrier formation to prevent etch defects, shorts, and write errors.
- Nitrided Magnetoresistive Stack for Low-Energy Magnetization Reversal
Nitride regions placed near the insulating layer lower switching current and reversal energy while preserving magnetization stability and MR ratio.
- Magnetic Memory Element with Thick Beta-Phase Heavy Metal Layer
A magnetic memory element uses a thick beta-phase heavy metal layer to generate spin orbit torque for magnetization reversal.
- 3D Magnetic Device Spin-Orbit Torque Writing
A three-dimensional magnetic device uses spin-orbit torque to reverse magnetization via a heavy metal layer.
- Exchange Coupling Film PtCr PtMn IrMn Thermal Stability
PtCr, PtMn, and IrMn composite layers boost exchange coupling magnetic field to resolve thermal stability issues in high-temperature environments.
- MTJ Top Contact via CMP and Encapsulating Layer
A chemical mechanical planarization process exposes a magnetic tunnel junction top surface for reliable electrical contact.