Magnetoresistive Element Thermal Stability via Composite Recording Layer
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Solution Overview
Problem
Magnetoresistance effect elements experience a rapid decrease in thermal stability index Δ as element size decreases below 30 nm, making it challenging to achieve high nonvolatility in magnetic memory with small sizes.
Innovation Solution
A magnetoresistance effect element configuration with a recording layer comprising multiple magnetic layers and non-magnetic insertion layers, where the non-magnetic layers have a thickness of 0.5 nm or more, enhancing interfacial magnetic anisotropy and magnetostatic coupling, thereby increasing the thermal stability index Δ even at smaller sizes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If element size is reduced to achieve higher integration density, then cell area is reduced, but thermal stability index decreases rapidly
Solution Approach 1:
The recording layer is segmented into multiple magnetic layers (first magnetic layer and second magnetic layer) separated by a non-magnetic insertion layer. This segmentation allows each layer to contribute to thermal stability while maintaining a compact overall structure, resolving the contradiction between small cell area and high thermal stability index
Solution Approach 2:
The invention uses a composite structure combining magnetic layers with specific materials (CoFeB, CoFe) and a non-magnetic insertion layer (Ta, TaOx). This composite material approach enhances interfacial magnetic anisotropy and magnetostatic coupling, achieving high thermal stability in a reduced area
2Reliability
If non-magnetic insertion layer thickness is increased to enhance interfacial magnetic anisotropy, then thermal stability index improves, but element complexity increases
Solution Approach 1:
The invention optimizes the thickness parameter of the non-magnetic insertion layer to be 0.5 nm or more, which is sufficient to generate strong interfacial magnetic anisotropy without excessive thickness. This parameter optimization achieves high thermal stability while minimizing structural complexity
Solution Approach 2:
The non-magnetic insertion layer is positioned locally between the first and second magnetic layers, creating a focused region of enhanced interfacial magnetic anisotropy. This localized approach improves thermal stability without requiring complex modifications throughout the entire structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration provides a magnetoresistance effect element and magnetic memory with improved thermal stability index Δ, ensuring nonvolatility and magnetic coupling at smaller sizes, effectively addressing the thermal stability reduction issue.
Implementation Method 1
enhancing interfacial magnetic anisotropy and magnetostatic coupling, thereby increasing the thermal stability index Δ
Implementation Method 2
enhancing interfacial magnetic anisotropy and magnetostatic coupling
Data Source
AI summary
A magnetoresistance effect element is provided, which can, even in a region where the element size of the magnetoresistance effect element is small, implement stable record holding at higher temperatures, and moreover which has higher thermal stability.The magnetoresistance effect element has a configuration including reference layer (B1)/first non-magnetic layer (1)/first magnetic layer (21)/first non-magnetic insertion layer (31)/second magnetic layer (22). A magnetostatic coupling is established between the first magnetic layer (21) and the second magnetic layer (22) due to magnetostatic interaction becoming dominant.