Magnetic Memory Devices Reducing Electrical Shorts

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Current magnetic memory devices face challenges in achieving high integration and reliability, particularly in utilizing spin-orbit torque-based technology for efficient data storage and retrieval with minimal power consumption.

Innovation Solution

The development of a magnetic memory device incorporating a substrate with a metal pattern, multiple magnetic tunnel junction patterns, and an anti-oxidation layer, where each magnetic tunnel junction pattern includes a free magnetic pattern and a pinned magnetic pattern, utilizing spin-orbit torque to change the resistance state for data storage and retrieval, with the anti-oxidation layer enhancing electrical connectivity and preventing electrical shorts.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If magnetic tunnel junction patterns are placed closer together to increase integration density, then high integration is achieved, but electrical shorts between adjacent patterns occur

Engineering Contradiction:
Improveintegration densityVSAvoidelectrical connectivity
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

A metal pattern is introduced as an intermediary conductive layer between adjacent magnetic tunnel junction patterns. This metal pattern serves as a mediator that provides controlled electrical connectivity while preventing direct electrical shorts between the magnetic tunnel junction patterns, enabling higher integration density without compromising reliability

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The electrical connection structure is segmented into distinct components: the metal pattern extending in a first direction and the anti-oxidation layer extending in a second direction. This segmentation allows each layer to perform its specific function independently - the metal pattern provides conductivity while the anti-oxidation layer provides protection, resolving the contradiction between connectivity and isolation

Inventive Principle:
Principle #1Segmentation

2Ease of manufacture

If conventional patterning processes are used without additional protective layers, then manufacturing simplicity is maintained, but electrical shorts and damage to magnetic tunnel junction patterns occur

Engineering Contradiction:
Improvepatterning process simplicityVSAvoidpattern integrity
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The anti-oxidation layer is formed preliminarily before the magnetic tunnel junction patterns undergo patterning processes. This preliminary protective action prevents oxidation and damage during subsequent manufacturing steps, ensuring pattern integrity without significantly complicating the overall manufacturing process

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The material properties are changed by introducing the anti-oxidation layer with different chemical and physical properties than the metal pattern. This parameter change creates a functional distinction where the anti-oxidation layer provides protective properties while the metal pattern provides conductive properties, preventing electrical shorts

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables high integration and improved reliability of spin-orbit torque-based magnetic memory devices, allowing for efficient data storage and retrieval with reduced power consumption and minimized damage during the patterning process.

Implementation Method 1

a magnetic tunnel junction may include two magnetic layers and an insulating layer disposed between the two magnetic layers, and a resistance of the magnetic tunnel junction may be changed according to magnetization directions of the two magnetic layers

Methodology Applied
Scientific EffectMagnetoresistance: Magnetoresistance

Implementation Method 2

an anti-oxidation layer between the metal pattern and the magnetic tunnel junction pattern

Methodology Applied
Scientific EffectOxidation prevention: Oxidation

Data Source

PatentUS11342495B2Magnetic memory devices for reducing electrical shorts between magnetic tunnel junction patterns
Publication Date: 2022.05.24 SAMSUNG ELECTRONICS CO LTD
  • US11342495B2 patent drawing
  • US11342495B2 patent drawing
  • US11342495B2 patent drawing

AI summary

Magnetic memory devices may include a substrate, a metal pattern extending in a first direction on the substrate, a magnetic tunnel junction pattern on the metal pattern, and an anti-oxidation layer between the metal pattern and the magnetic tunnel junction pattern. The magnetic tunnel junction pattern may include a first magnetic pattern, a tunnel barrier pattern, and a second magnetic pattern.