Magnetic Memory Device With Core Element And Insulating Barrier
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current Spin Hall Effect (SHE) based magnetoresistive random access memory (MRAM) technologies face challenges in efficiently switching and reading data due to limitations in write current and read speed, with existing methods not effectively addressing issues of data credibility and error correction.
Innovation Solution
The proposed solution involves a magnetic memory device structure comprising a core element, a free layer, a barrier layer, and a reference layer, where the free layer's magnetization direction is switchable under an electrical current, and the barrier layer is made of an insulating material, allowing for low resistance states to indicate data '1' and high resistance states to indicate data '0', with read operations performed by measuring output currents through electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional SHE-MRAM structure is used, then data storage function is achieved, but write current efficiency is insufficient
Solution Approach 1:
The patent segments the magnetic memory structure into distinct functional layers: reference layer, barrier layer, free layer, and heavy metal layer. This segmentation allows independent optimization of each layer's properties, enabling efficient spin current generation in the heavy metal layer while maintaining stable magnetization in the reference and free layers, thus resolving the contradiction between write current efficiency and switching reliability.
Solution Approach 2:
The patent employs composite material structure combining ferromagnetic materials (reference layer, free layer) with heavy metal materials (for spin Hall effect). This composite approach leverages the high spin Hall angle of heavy metals to generate efficient spin current for magnetization switching, while the ferromagnetic layers provide stable magnetic states, achieving both low write current and high reliability.
2Speed
If conventional read method is used, then read operation is performed, but read speed is limited
Solution Approach 1:
The patent introduces a heavy metal layer as an intermediary element that enables efficient spin current generation through the spin Hall effect. This intermediary layer facilitates rapid magnetization switching in the free layer during read operations, achieving fast read speeds while the tunnel magnetoresistance effect in the barrier layer ensures precise data detection, thus resolving the contradiction between speed and precision.
3Reliability
If simple error detection is used, then data reading is performed, but data credibility cannot be determined
Solution Approach 1:
The patent implements a feedback mechanism where the resistance state of the magnetic tunnel junction is continuously monitored and compared against expected values. The heavy metal layer's spin Hall effect provides a controllable signal that feeds back to verify the magnetization state, enabling reliable data credibility determination through resistance measurement without requiring complex external verification circuits.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables efficient data storage and retrieval with low write current, fast read speeds, and improved data credibility by comparing output current differences to determine accurate data storage, reducing write errors and enhancing memory device performance.
Implementation Method 1
Spin Hall Effect (SHE) based magnetoresistive random access memory (MRAM) is a type of nonvolatile memory
Implementation Method 2
magnetoresistive random access memory (MRAM)
Data Source
AI summary
A magnetic memory device includes a core element, a free layer surrounding the core element, a barrier layer surrounding the free layer, and a reference layer surrounding the barrier layer. Two ends of the core element are electrically coupled to a first electrode and a second electrode, respectively. A direction of magnetization of the free layer is switchable between a first direction and a second direction under an influence of an electrical current flowing along the core element. The barrier layer includes an electrically insulating material. The reference layer is electrically coupled to a third electrode. A direction of magnetization of the reference layer remains along the first direction or the second direction.