3D Hall Sensor Sloped Sidewall In-Plane Sensitivity
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Solution Overview
Problem
Conventional Hall sensors have low sensitivity when detecting magnetic fields with directions parallel to the substrate surface due to their planar design.
Innovation Solution
A Hall sensor structure with a semiconductor body featuring a sloped sidewall and a well with sections beneath the top and Hall surfaces, along with multiple contacts coupled to the well, allowing for enhanced sensitivity by intersecting the magnetic field at a non-planar geometry.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a planar Hall sensor structure is used, then the device complexity is low and manufacturing is easy, but the sensitivity for detecting magnetic fields parallel to the substrate surface is low
Solution Approach 1:
The patent transitions from a conventional planar (2D) Hall sensor structure to a three-dimensional structure by forming a well that extends vertically beneath the substrate surface. This dimensional change allows the Hall sensing region to intersect magnetic field lines more effectively, thereby improving sensitivity for detecting in-plane magnetic fields while maintaining manufacturing feasibility through standard semiconductor processing techniques.
Solution Approach 2:
The patent employs a sloped sidewall configuration in the well structure, replacing flat vertical walls with inclined surfaces. This curved/geometric modification optimizes the interaction between the magnetic field and the Hall sensing region, enhancing the sensor's ability to detect magnetic fields parallel to the substrate surface while managing the complexity of the device structure.
2Measurement precision
If a planar Hall sensor structure is used, then the manufacturing process is simple, but the sensitivity for detecting magnetic fields parallel to the substrate surface is low
Solution Approach 1:
The patent implements a three-dimensional well structure that extends beneath the substrate surface, adding a vertical dimension to the conventional planar design. This dimensional enhancement improves magnetic field detection sensitivity by creating a larger interaction volume with the magnetic field while utilizing established semiconductor fabrication processes such as trench formation and epitaxial growth, thereby maintaining manufacturing ease.
Solution Approach 2:
The patent modifies key structural parameters including well depth, well width, and sidewall slope angle to optimize sensitivity. By adjusting these geometric parameters within the capabilities of existing manufacturing processes, the patent achieves improved magnetic field detection while maintaining compatibility with standard semiconductor fabrication techniques.
3Measurement precision
If a non-planar geometry is used, then the sensitivity for detecting magnetic fields parallel to the substrate surface is improved, but the device complexity increases
Solution Approach 1:
The patent introduces a vertical dimension by forming a well that extends beneath the substrate surface, creating a three-dimensional structure from a conventional planar design. This non-planar geometry increases the interaction volume with magnetic fields, improving sensitivity while managing structural complexity through systematic fabrication processes.
Solution Approach 2:
The patent incorporates sloped sidewalls in the well structure, replacing simple vertical walls with inclined surfaces. This geometric refinement optimizes magnetic field interaction and enhances sensitivity while controlling structural complexity through precise fabrication techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The non-planar geometry of the Hall sensor structure enables greater sensitivity in detecting magnetic fields parallel to the substrate surface, surpassing the limitations of conventional Hall sensors.
Implementation Method 1
A Hall sensor relies on the production of a voltage difference (i.e., a Hall voltage) across an electrical conductor produced by a combination of a current flowing in the conductor and a magnetic field with a field direction perpendicular to the flowing current
Implementation Method 2
A magnetic field may exert a force on moving charged particles according to the Lorentz force law
Data Source
AI summary
Structures for a Hall sensor and methods of forming a structure for a Hall sensor. The structure includes a semiconductor body having a top surface and a sloped sidewall defining a Hall surface that intersects the top surface. The structure further includes a well in the semiconductor body and multiple contacts in the semiconductor body. The well has a section positioned in part beneath the top surface and in part beneath the Hall surface. Each contact is coupled to the section of the well beneath the top surface of the semiconductor body.