Thin Film Integrated Circuit Peeling Using Halogen Fluoride Release Layer
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Solution Overview
Problem
Current methods for peeling thin film integrated circuits from substrates are costly and inefficient, often resulting in distorted circuits due to stress and high production costs, with limited reuse of substrates and low production efficiency.
Innovation Solution
A method involving the formation of a metal-containing release layer over a substrate, followed by the deposition of a resin film and the use of halogen fluoride gases or liquids to remove the release layer, allowing for physical peeling of the integrated circuits with minimal substrate damage and enabling substrate reuse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a release layer is removed by chemical reaction or dissolution, then the thin film integrated circuit can be separated from the substrate, but the substrate cannot be reused and production cost increases
Solution Approach 1:
The invention extracts the release layer from between the substrate and thin film integrated circuit through chemical reaction with halogen fluoride gas or liquid. This removes the separating agent while leaving the substrate intact and reusable, resolving the contradiction between achieving clean separation and maintaining substrate reusability
Solution Approach 2:
The invention changes the chemical parameters by introducing halogen fluoride gas or liquid that reacts specifically with the release layer material. This chemical transformation allows selective removal of the release layer without damaging the substrate, enabling both effective separation and substrate reuse
2Reliability
If the release layer is removed completely, then the thin film integrated circuit can be peeled off, but the peeling process takes significant time and reduces production efficiency
Solution Approach 1:
The invention replaces mechanical peeling methods with chemical reaction. By introducing halogen fluoride that chemically reacts with and removes the release layer, the process eliminates the need for time-consuming mechanical peeling while achieving complete separation, thus improving production efficiency without sacrificing peeling completeness
3Ease of manufacture
If physical peeling is used to separate the thin film integrated circuit, then the process is simple, but the thin film integrated circuit becomes distorted due to stress
Solution Approach 1:
The invention uses halogen fluoride gas or liquid as an intermediary substance that chemically reacts with the release layer. This intermediary approach allows the thin film integrated circuit to be separated without direct physical contact and stress, maintaining shape integrity while keeping the process simple through chemical mediation rather than complex mechanical control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reduces production costs, maintains the integrity of the thin film integrated circuits, and enhances production efficiency by allowing for the reuse of substrates, thereby improving the overall cost-effectiveness and efficiency of the peeling process.
Implementation Method 1
removing the release layer by introducing a gas or a liquid containing halogen fluoride into the release layer
Data Source
AI summary
A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at least one of thin film integrated circuits is peeled from the substrate. A semiconductor device is formed by sealing the peeled thin film integrated circuit by lamination or the like.