Halogen-Free Tungsten Precursor Synthesis for Semiconductor Thin Films
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Solution Overview
Problem
Conventional tungsten precursors for semiconductor applications, such as tungsten fluoride and tungsten chloride, lead to corrosion and toxicity issues due to residual halogen impurities, necessitating the development of halogen-free alternatives with improved yield and film properties.
Innovation Solution
A method involving the synthesis of organometallic compounds using metal hexacarbonyl compounds, hexahydro-1,3,5-triazine, nitriles, and cyclopentadienyl groups to produce tungsten precursors with high thermal stability and reduced impurities, followed by vapor deposition to form thin films with specific resistance and phase composition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If halogen-based precursors (tungsten fluoride, tungsten chloride) are used, then the precursor structure is simple and thermal stability is high, but residual halogen impurities cause substrate corrosion and by-products have strong toxicity
Solution Approach 1:
The invention extracts and removes the harmful halogen elements from the precursor structure while retaining the beneficial thermal stability properties. By using halogen-free precursors such as tungsten acetylacetonate and tungsten cyclopentadienyl compounds, the source material is fundamentally changed to eliminate halogen impurities that cause substrate corrosion and toxicity, while maintaining adequate thermal stability for CVD processes
Solution Approach 2:
The invention employs precursors that are designed to decompose completely during the CVD process, leaving no residual harmful elements. The organic-based precursors are consumed in the reaction to form pure tungsten films, with their carbon and hydrogen components being removed as volatile by-products, effectively replacing persistent halogen-based materials with consumable organic alternatives
2Reliability
If halogen-free tungsten precursors containing cyclopentadienyl groups are used, then thermal stability is high and impurities in thin films are reduced, but reaction yield is low and production cost is high
Solution Approach 1:
The invention modifies the chemical parameters of the precursor molecules to optimize both yield and purity. By adjusting the ligand structures, molecular weights, and functional groups of the halogen-free precursors, the reaction efficiency is improved while maintaining thin film purity. This includes developing precursors with appropriate volatility and reactivity characteristics for high-yield CVD deposition
Solution Approach 2:
The invention applies different structural characteristics to different parts of the precursor molecule to achieve optimal performance. Specific functional groups and ligand arrangements are designed in localized regions of the molecule to enhance reaction yield in certain areas while maintaining overall thermal stability and film purity properties
3Object-affected harmful factors
If barrier layer is added to overcome fluorine and chlorine remaining in thin films, then corrosion problem is solved, but specific resistance increases
Solution Approach 1:
The invention removes the need for barrier layers by extracting and eliminating halogen elements from the precursor composition itself. By using halogen-free precursors, the source of corrosion-causing impurities is removed at the material level, allowing direct deposition of tungsten films without additional protective barrier layers, thus maintaining low electrical resistance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves a significant increase in yield and produces tungsten metal thin films with excellent electrical properties, including high density and low specific resistance, suitable for various electronic devices like semiconductors and solar cells.
Implementation Method 1
A method involving the synthesis of organometallic compounds using metal hexacarbonyl compounds, hexahydro-1,3,5-triazine, nitriles, and cyclopentadienyl groups to produce tungsten precursors
Implementation Method 2
a method for producing an organometallic compound that may be used as a vapor deposition compound that may be deposited as a thin film by vapor deposition
Implementation Method 3
deposited as a thin film by vapor deposition
Data Source
AI summary
The present invention relates to a method for producing a high yield of an organometallic compound including a step of allowing a metal hexacarbonyl compound to react with a hexahydro-1,3,5-triazine compound, and a thin film having excellent properties, fabricated by depositing the produced organometallic compound.