Uniform arene ligand mixtures keep vapor pressure stable during delivery, enabling reproducible, high-purity molybdenum film deposition.
Oxygen-, halogen-, and carbonyl-free dinuclear molybdenum precursors enable cleaner ALD or CVD films at lower temperatures.
A cyclopentadienyl molybdenum precursor improves volatility and thermal stability, enabling cleaner high-rate thin-film deposition.
Redox conversion to a cationic complex enables phase-based separation, cutting purification time and cost while reaching at least 95% purity.
Sequential salt exchange and ion-exchange steps produce isopolyoxotungstate salts and solvates with improved thermal and oxidizing-atmosphere stability.
Sequential ALD uses iodine-containing reactants to form high-purity, low-resistivity metal films with uniform coverage.
A hydrogenated syndiotactic crystalline dicyclopentadiene ring-opening polymer resin film maintains high thermal stability through precise melting point control.
Metal alkylidyne compounds react with alkynes to form functionalized cyclic polymers, overcoming dilute condition requirements for scalable production.
Replacing maleic anhydride with unsaturated acids lowers treatment temperature, boosting molybdenum content and preventing corrosion.
Replacing hydrogen sulfide with carbon disulfide eliminates toxicity hazards and reduces processing time.
A molybdenum imide compound enables high-quality thin film deposition via controlled vaporization.
Mixing molybdenum carbene with onium salt creates a composite that maintains catalytic activity while improving air stability.
Non-cyclopentadienyl chromium complexes enable olefin block copolymer production via chain shuttling mechanisms.
A liquid molybdenum precursor compound enables uniform film deposition on complex substrates.
Modified organometallic precursors improve thermal stability and vapor pressure to resolve contradictions in semiconductor manufacturing reliability.
Synthesizes organometallic tungsten precursors using metal hexacarbonyl and triazine compounds.
Sintered tungsten hexacarbonyl solid source enables stable vapor deposition of high-purity tungsten films.