Molybdenum Imide CVD Precursor for Thin Film Quality
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Solution Overview
Problem
Conventional molybdenum compounds used in CVD methods for producing thin films have high melting points and low vapor pressures, leading to poor thermal stability and residue formation during decomposition, which affects the quality of the thin film and causes operational issues.
Innovation Solution
A method using a specific molybdenum imide compound with a low melting point and high vapor pressure, represented by formulas (I) and (II), is introduced for vapor deposition, allowing for the formation of high-quality thin films with improved thermal stability and controlled precursor supply.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional molybdenum compounds are used as CVD materials, then the thin film can be produced, but the compound has high melting point and low vapor pressure causing residue formation and poor thermal stability
Solution Approach 1:
The patent changes the chemical composition parameters of the molybdenum compound by introducing specific ligands (cyclopentadienyl, imido, alkyl groups) to modify the thermal and vaporization properties. This transforms the compound from having high melting point/low vapor pressure to low melting point/high vapor pressure characteristics suitable for CVD processing
Solution Approach 2:
The patent creates a composite molecular structure combining molybdenum center with organic ligands (cyclopentadienyl rings, imido groups, alkyl chains). This composite approach allows optimization of both thermal stability and vapor pressure by balancing the inorganic metal core with organic functional groups that facilitate vaporization while maintaining structural integrity
2Manufacturing precision
If conventional molybdenum compounds are used, then the thin film can be formed, but a large amount of residue is formed after thermal decomposition
Solution Approach 1:
The patent converts the previously harmful residue formation into a beneficial complete decomposition process. By designing the molecule with labile alkyl groups and appropriate ligands, the compound decomposes completely into volatile species during CVD processing, eliminating residue that would otherwise contaminate the thin film and equipment
Solution Approach 2:
The patent modifies the decomposition temperature and completeness parameters by selecting specific ligands that decompose at controlled temperatures. The imido and alkyl groups are chosen to decompose completely in the CVD temperature range, ensuring full vaporization without residue while maintaining film quality
3Productivity
If high vapor pressure is achieved by lowering melting point, then vaporization is improved, but thermal stability may be compromised
Solution Approach 1:
The patent creates a composite structure where the molybdenum core provides thermal stability while the organic ligands (cyclopentadienyl, imido, alkyl groups) provide volatility. This separation of functions within the molecule allows simultaneous achievement of high vapor pressure and adequate thermal stability for CVD processing
Solution Approach 2:
The patent optimizes the balance between vapor pressure and thermal stability by adjusting the molecular weight, ligand types, and substitution patterns. The specific combination of cyclopentadienyl and imido groups with alkyl substituents creates a compound that vaporizes efficiently but maintains structural integrity during the CVD process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables the production of high-quality thin films with enhanced thermal stability and vaporization properties, reducing residue formation and improving the efficiency of the CVD process.
Implementation Method 1
a vapor that has been obtained by vaporizing a thin-film-forming material comprising a molybdenum imide compound
Implementation Method 2
forming a thin film comprising molybdenum on the substrate by decomposing and/or chemically reacting the molybdenum imide compound
Implementation Method 3
a method for producing a thin film containing molybdenum by a CVD method using a specific molybdenum imide compound as a precursor
Data Source
AI summary
In the method of the present invention for producing a thin film, including introducing, onto a substrate, a vapor that has been obtained by vaporizing a thin-film-forming material including a molybdenum imide compound represented by the following formula (I) and that includes the molybdenum imide compound; and then forming a thin film including molybdenum on the substrate by decomposing and/or chemically reacting the molybdenum imide compound.(In the formula, R1 though R10 each represent a hydrogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms, and R11 represents a linear or branched alkyl group having 1 to 8 carbon atoms).