Hardmask Composition with Carbon Nanostructures for Semiconductor Patterning
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Solution Overview
Problem
In the semiconductor industry, forming fine patterns with high aspect ratios is challenging due to limitations in the height and durability of photoresist and hardmask layers during etching processes, leading to potential damage and degradation of electrical characteristics in devices.
Innovation Solution
A hardmask composition incorporating a composite of two-dimensional (2D) carbon nanostructures and zero-dimensional (0D) carbon nanostructures, such as graphene nanoparticles and fullerene, is used, which provides improved etching resistance and stability through enhanced density and solubility, allowing for finer pattern formation and reduced damage during etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the height of photoresist layer and hardmask pattern is increased to handle high aspect ratio material layers, then the etching resistance is improved, but the pattern may be damaged during etching and electrical characteristics deteriorate
Solution Approach 1:
The patent uses a composite hardmask structure consisting of a lower hardmask layer (higher etching resistance, lower refractive index) and an upper hardmask layer (lower etching resistance, higher refractive index). This composite structure optimizes both etching resistance and optical properties, preventing pattern damage while maintaining reliability during etching processes.
Solution Approach 2:
The patent applies different material properties to different parts of the hardmask structure. The lower hardmask layer has higher etching resistance to protect against etching attacks, while the upper hardmask layer has higher refractive index to maintain optical contrast for pattern formation. This local differentiation of properties resolves the contradiction between etching resistance and pattern integrity.
2Reliability
If single layer or multiple layers of conductive or insulating material are stacked as hardmask, then etching resistance is improved, but deposition temperature increases and physical properties of material layer are modified
Solution Approach 1:
The patent replaces traditional mechanical/thermal deposition methods with solution-based coating methods. The hardmask composition is applied as a solution that forms the desired hardmask layers without requiring high deposition temperatures, thus avoiding modification of the material layer's physical properties while maintaining etching resistance.
3Productivity
If line-width of material layer is narrowed to increase integration, then device density is improved, but aspect ratio increases and etching becomes more difficult
Solution Approach 1:
The composite hardmask structure with optimized layer thicknesses and material properties provides enhanced etching resistance and optical contrast, enabling precise patterning of narrow line-width material layers with high aspect ratios, thus supporting increased device integration.
Solution Approach 2:
The patent optimizes parameters such as layer thickness, refractive index, and etching resistance of the hardmask layers to achieve precise control over the etching process, enabling manufacturing of narrow line-width patterns with high aspect ratios while maintaining etching precision.
Data Source
Figure 1
Figure 2A~2B
Figure 2C~2D
AI summary
Provided are a hardmask composition and a method of forming a fine pattern using the hardmask composition, the hardmask composition including a solvent, a 2D carbon nanostructure (and/or a derivative thereof), and a 0D carbon nanostructure (and/or a derivative thereof).