Hardmask Compositions for Resist Underlayer Etch Selectivity
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Solution Overview
Problem
Current hardmask compositions for resist underlayer films in semiconductor manufacturing lack sufficient etch selectivity, adhesion, and antireflective properties, leading to substrate damage and poor pattern transfer during lithographic processes.
Innovation Solution
The development of hardmask compositions comprising specific polymer reactions, including compounds of Formula 1 and Formula 2, with acid or base catalysts and organic solvents, which form antireflective hardmask layers that enhance etch selectivity and minimize reflectivity between the resist and underlying layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If an antireflective coating (ARC) material is used to minimize reflectivity, then reflectivity between imaging layer and substrate is reduced, but etch selectivity relative to the imaging layer deteriorates
Solution Approach 1:
The invention divides the protective function into two separate layers: an ARC layer for minimizing reflectivity and a hardmask layer for providing etch selectivity. This segmentation allows each layer to perform its specific function without compromising the other, resolving the contradiction between reflectivity control and etch selectivity.
Solution Approach 2:
The hardmask layer acts as an intermediary between the ARC layer and the substrate. It provides the necessary etch selectivity that the ARC material lacks, while allowing the ARC layer to perform its reflectivity-minimizing function. The hardmask serves as a mediator that enables both functions to coexist.
2Reliability
If a hardmask layer is added between patterned resist and substrate, then etch selectivity is improved, but device complexity increases
Solution Approach 1:
The invention combines the ARC layer and hardmask layer into a single integrated structure that can be applied in one coating step. This merging reduces process complexity compared to applying separate layers through multiple steps, while still providing both reflectivity control and etch selectivity.
Solution Approach 2:
The hardmask composition is designed to perform multiple functions: providing etch selectivity, maintaining adhesion to both the resist and substrate, and working with various ARC materials. This multi-functionality reduces the need for additional specialized layers or processes.
3Manufacturing precision
If multiple etching steps are required due to poor etch selectivity, then pattern transfer accuracy is improved, but manufacturing time increases
Solution Approach 1:
The hardmask layer is applied in advance before the etching process, establishing the necessary etch selectivity barrier beforehand. This preliminary action ensures that the pattern transfer can be completed in a single etching step without requiring multiple sequential etching operations, thereby reducing manufacturing time while maintaining precision.
4Measurement precision
If resist thickness is decreased for micropatterning, then resolution is improved, but masking properties deteriorate
Solution Approach 1:
The hardmask layer serves as an intermediary that compensates for the reduced masking properties of thin resist layers. It provides the additional etch resistance needed to protect the pattern during etching, allowing the use of thinner resist for high-resolution micropatterning without sacrificing pattern fidelity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed hardmask compositions improve etch selectivity, adhesion, and antireflective properties, reducing substrate damage and enabling effective pattern transfer, thereby enhancing the lithographic process margin.
Implementation Method 1
a first polymer prepared by the reaction of a compound of Formula 1 with a compound of Formula 2
Implementation Method 2
a first polymer prepared by the reaction of a compound of Formula 1 with a compound of Formula 2
Implementation Method 3
an acid or base catalyst
Data Source
AI summary
Provided herein are hardmask compositions for resist underlayer films, wherein in some embodiments, the hardmask compositions include(a) a first polymer prepared by the reaction of a compound of Formula 1 wherein n is a number of 3 to 20, with a compound of Formula 2(R)m—Si—(OCH3)4-m (2) wherein R is a monovalent organic group and m is 0, 1 or 2;(b) a second polymer that includes at least one of the structures represented by Formulae 3-6;(c) an acid or base catalyst; and(d) an organic solvent.Further provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the present invention. In addition, provided herein are semiconductor integrated circuit devices produced by a method embodiment of the invention.