Heat-shrinkable conductive microstructures for curved surface interconnects
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Solution Overview
Problem
Traditional methods for forming micrometer-scale conductive interconnect structures on non-planar or curved surfaces are inefficient and costly due to challenges with photolithography processes, limiting the use of suitable substrate materials and making it difficult to ensure conductivity on curved surfaces.
Innovation Solution
A conductive interconnect structure comprising a polymeric substrate that shrinks upon heat application, embedding compliant conductive microstructures such as nanofibers, which increases interconnect density and can conform to curved surfaces without buckling or cracking, allowing for high-density, finely pitched microstructures without the need for photolithography.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography processes are used to form micrometer-scale conductive interconnect structures on non-planar or curved surfaces, then conductive traces can be formed, but the process becomes time-consuming, costly, and often infeasible
Solution Approach 1:
The patent replaces the photolithography process (optical/mechanical system) with a direct deposition method where conductive material is deposited onto a patterned substrate and then heat-shrunk to form the final interconnect structure. This substitution eliminates the need for complex photolithography steps while achieving the same micrometer-scale precision through controlled material deposition and thermal forming.
Solution Approach 2:
The patent utilizes heat-shrinking as a key parameter change to transform the deposited conductive material into the final configured interconnect structure. By controlling temperature and shrinkage parameters, the process achieves precise micrometer-scale trace formation without requiring photolithography, thereby improving productivity while maintaining manufacturing precision.
2Manufacturing precision
If photolithography processes are used to form conductive traces on curved surfaces, then traces can be formed, but it becomes difficult to ensure conductivity and often cost-prohibitive
Solution Approach 1:
The patent replaces photolithography with a direct deposition approach where conductive material is deposited onto a patterned substrate and then heat-shrunk to form the final interconnect structure. This substitution eliminates the need for complex photolithography steps while achieving the same micrometer-scale precision through controlled material deposition and thermal forming.
Solution Approach 2:
The patent utilizes heat-shrinking as a key parameter change to transform the deposited conductive material into the final configured interconnect structure. By controlling temperature and shrinkage parameters, the process achieves precise micrometer-scale trace formation without requiring photolithography, thereby improving productivity while maintaining manufacturing precision.
3Manufacturing precision
If traditional photolithography methods are used, then conductive interconnect structures can be formed on planar substrates, but the method is limited in substrate material choices due to structural and conductivity requirements
Solution Approach 1:
The patent creates a universal process that can be applied to various substrate materials (metallic, non-metallic, planar, non-planar, curved, flexible, rigid) by using heat-shrinking as the key forming mechanism. This multi-functional approach eliminates the need for substrate-specific photolithography processes, thereby enhancing adaptability while maintaining manufacturing precision for conductive interconnect structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient and cost-effective formation of high-density, finely pitched conductive microstructures on curved surfaces, enhancing conductivity and structural integrity while reducing manufacturing complexity and costs.
Implementation Method 1
a polymeric substrate shrinkable from an unshrunk state to a shrunken state in response to selective application of heat
Implementation Method 2
selective application of heat to the polymeric substrate to shrink at least a portion of the polymeric substrate
Data Source
AI summary
A conductive interconnect structure comprises a polymeric substrate (e.g., a thermoplastic) and a plurality of compliant conductive microstructures (e.g., conductive carbon nanofibers) embedded in the polymeric substrate. The microstructures can be arranged linearly or in a grid pattern. In response to heating, the polymeric substrate transitions from an unshrunk state to a shrunken state to move the microstructures closer together, thereby increasing an interconnect density of the compliant conductive microstructures. Thus, the gap or pitch between adjacent microstructures is reduced in response to heat-induced shrinkage of the polymeric substrate to generate finely-pitched microstructures that are densely pitched, thereby increasing the current-carrying capacity of the microstructures. The polymeric material can be heated to conform or form-fit to planar and non-planar surfaces/geometries, and can be selectively heated at various portions to tailor or customize the interconnect density of the microstructures at selected portions. Associated electrical conducting assemblies and methods are provided.