Carbon Heat-Spreading Electrode Structure for Higher Current Limits

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Solution Overview

Problem

Semiconductor elements face issues with electromigration, leading to line disconnection due to metal ion movement at high currents, which existing materials like copper and aluminum cannot adequately address, necessitating a higher allowable current limit and stable current flow.

Innovation Solution

Incorporating a heat dissipation layer made of carbon atoms, such as graphene or diamond structures, with a wider width than the metal layer to enhance electrical conductivity and distribute heat effectively, thereby increasing the allowable current limit and maintaining continuous current flow even after a short circuit.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If metal materials such as copper and aluminum are used in electrode structure, then electrical conductivity is improved, but electromigration phenomenon occurs leading to line disconnection at high current

Engineering Contradiction:

Improveallowable current limitVSAvoidelectromigration phenomenon

Core Design Contradiction:

ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent uses a composite structure combining carbon material layer and metal layer. The carbon material layer (graphite, diamond, carbon nanotubes) provides high allowable current limit and suppresses electromigration, while the metal layer maintains electrical conductivity. This composite approach resolves the contradiction between conductivity and electromigration resistance.

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The carbon material layer acts as an intermediary between the metal layer and the environment, preventing metal atom diffusion and suppressing electromigration phenomenon. It mediates the harmful effects on metal materials while allowing current transmission.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Reliability

If metal materials are used to increase conductivity, then electrical performance is improved, but heat accumulation occurs causing line disconnection

Engineering Contradiction:

Improvecontinuous current flowVSAvoidheat accumulation

Core Design Contradiction:

ReliabilityVSTemperature

Solution Approach 1:

The carbon material layer is introduced into the composite structure to address heat management. Carbon materials have high thermal conductivity, enabling effective heat dissipation from the metal layer, thus preventing heat accumulation and line disconnection while maintaining electrical performance.

Inventive Principle:

Principle #40Composite materials

3Reliability

If carbon material layer is added to suppress electromigration, then allowable current limit is increased, but device structure becomes more complex

Engineering Contradiction:

Improveallowable current limitVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The carbon material is formed as a thin film layer on the metal layer. This thin film approach increases allowable current limit and suppresses electromigration while minimizing the added structural complexity and maintaining manufacturability.

Inventive Principle:

Principle #30Flexible shells and thin films

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The semiconductor device achieves a higher allowable current limit and continuous current flow, preventing device malfunction and damage by effectively distributing heat and maintaining conductivity, even under high current conditions.

Implementation Method 1

due to the high thermal conductivity of a carbon material, it is possible to delay line disconnection generated due to heat

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

a carbon material layer inhibits diffusion of metal atoms to suppress the electromigration phenomenon

Methodology Applied

Scientific EffectDiffusion barrier: Diffusion Barrier

Data Source

PatentUS12489028B2Electrode structure including metal and heat dissipation layer and semiconductor including the electrode structure

Publication Date: 2025.12.02 SAMSUNG ELECTRONICS CO LTD

AI summary

A semiconductor device includes a substrate. A first heat dissipation layer is disposed on the substrate and extends in a first direction. A metal layer is disposed on the first heat dissipation layer and extends in the first direction. A width of the first heat dissipation layer in a second direction intersecting the first direction is greater than a width of the metal layer in the second direction. The first heat dissipation layer has a structure made of carbon atoms and includes at least one among graphene, nanotubes, and a diamond structure.