Heat-Transfer Semiconductor Layer for IC Package Thermal Management
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Solution Overview
Problem
Integrated circuit (IC) package designs face challenges in heat dissipation due to mismatched coefficients of thermal expansion between metal heat spreaders and semiconductor devices, leading to reliability issues and high failure rates, and existing solutions like metal heat spreaders are costly and inefficient.
Innovation Solution
Implementing a heat-transfer semiconductor layer with a coefficient of thermal expansion that matches the active semiconductor device layer, providing a direct thermal path for heat dissipation without the need for metal heat spreaders, and using leftover scrap material to reduce costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If metal heat spreaders are used to provide heat dissipation pathway, then heat dissipation capability is improved, but reliability deteriorates due to coefficient of thermal expansion mismatch causing stress and device failure
Solution Approach 1:
The patent changes the material parameter (coefficient of thermal expansion) by selecting a semiconductor layer material whose CTE matches that of the active semiconductor device, thereby eliminating thermal stress while maintaining heat dissipation capability
Solution Approach 2:
The patent introduces a semiconductor layer as an intermediary between the active semiconductor device and the external environment, which serves as a thermal conduit while having compatible thermal expansion properties, thus mediating between heat dissipation requirements and reliability concerns
2Temperature
If metal heat spreaders are used to enhance heat dissipation, then heat dissipation capability is improved, but cost increases due to additional components and manufacturing complexity
Solution Approach 1:
The patent merges the heat dissipation function with an existing structural component (semiconductor layer) that is already part of the device architecture, eliminating the need for separate metal heat spreader components and reducing manufacturing complexity
Solution Approach 2:
The patent makes the semiconductor layer multi-functional by having it serve both as a structural/component layer and as a heat dissipation pathway, thereby eliminating the need for dedicated heat spreader components
3Reliability
If semiconductor device is buried underneath mold compound with low thermal conductivity, then device protection is improved, but heat dissipation capability deteriorates
Solution Approach 1:
The patent segments the mold compound into two functional zones: an exposed region that provides thermal pathways for heat dissipation, and a covered region that provides mechanical protection, thereby resolving the contradiction between protection and heat dissipation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces stress on the semiconductor device, enhances heat dissipation, and improves reliability while being cost-effective by utilizing existing package designs without altering them significantly.
Implementation Method 1
at least one heat-transfer semiconductor layer on the active semiconductor device layer
Implementation Method 2
The heat-transfer semiconductor layer has a coefficient of thermal expansion that substantially matches a coefficient of thermal expansion of the active semiconductor device layer
Data Source
AI summary
An integrated circuit package comprising an active semiconductor device layer and at least one heat-transfer semiconductor layer on the active semiconductor device layer. The heat-transfer semiconductor layer has a coefficient of thermal expansion that substantially matches a coefficient of thermal expansion of the active semiconductor device layer.