Hemispherical Micro-LED Structure for Etch Damage and Alignment
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Solution Overview
Problem
Micro-LED light-emitting devices face issues with side surface damage during dry etching, leading to reduced light-emitting efficiency due to plasma-induced carrier trap sites and misalignment during manufacturing, which decreases the effective light-emitting area and increases electrical resistance.
Innovation Solution
A nitride semiconductor structure with a convex hemispherical shape is used, surrounded by a passivation pattern, to prevent side surface damage and enhance light-emitting efficiency, while also allowing for easier alignment and reduced electrode spacing, thereby improving current injection and manufacturing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dry etching is used to manufacture micro-LED light-emitting devices, then manufacturing precision is improved, but side surface damage occurs leading to reduced light-emitting efficiency
Solution Approach 1:
The patent applies spheroidality by forming a convex hemispherical shape on the nitride semiconductor structure. This curved surface design prevents plasma-induced carrier trap sites during dry etching, thereby maintaining light-emitting efficiency while achieving manufacturing precision. The hemispherical shape is specifically engineered to eliminate side surface damage that occurs with conventional flat or angular structures.
2Ease of manufacture
If conventional flat nitride semiconductor structure is used, then manufacturing process is simple, but light-emitting area is reduced due to side surface damage
Solution Approach 1:
The convex hemispherical shape increases the effective light-emitting area by eliminating side surface damage while maintaining manufacturing feasibility. The curved geometry provides larger active area compared to flat structures, and the process integrates smoothly into existing semiconductor fabrication workflows.
3Device complexity
If conventional nitride semiconductor structure is used, then device structure is simple, but electrical resistance is high due to increased electrode spacing
Solution Approach 1:
The patent transitions from a conventional planar two-dimensional electrode arrangement to a three-dimensional convex hemispherical structure. This dimensional change allows electrodes to be positioned closer together while maintaining adequate current injection paths, thereby reducing electrical resistance without significantly increasing overall device complexity.
4Productivity
If micro-sized light-emitting elements are manufactured, then productivity is improved, but alignment precision becomes difficult to achieve
Solution Approach 1:
The convex hemispherical shape introduces asymmetric geometric features that serve as natural alignment markers. This asymmetric geometry enables precise positioning and orientation of micro-sized light-emitting elements during assembly, solving the alignment precision problem while maintaining high productivity through scalable manufacturing processes.
Data Source
AI summary
The present disclosure relates to a light-emitting device, display device including the same, and method for manufacturing the same. A light-emitting device includes a nitride semiconductor structure including a first semiconductor layer, an active layer and a second semiconductor layer; and a passivation pattern at least partially surrounding an outer side surface of the nitride semiconductor structure, wherein the nitride semiconductor comprises a convex hemispherical shape.