HEMT Layout With Integrated 2DEG Resistor for Current Sensing
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Solution Overview
Problem
Existing semiconductor devices integrating high electron mobility transistors (HEMTs) require separate discrete current sensing resistors, which occupy additional area and increase manufacturing costs due to their large footprint and separate fabrication processes.
Innovation Solution
Integrating a resistor within the same region as the HEMT using a two-dimensional electron gas (2DEG) structure, where the resistor is electrically connected to the HEMT, eliminating the need for additional layout area and simplifying fabrication by integrating process steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a discrete current sensing resistor is used, then current sensing function is achieved, but layout area increases and manufacturing cost increases
Solution Approach 1:
The patent merges the current sensing resistor with the HEMT device structure by forming the resistor within the same semiconductor layer system. The resistor is created using the same compound semiconductor barrier layer and channel layer that form the HEMT, integrating both functions into a single device footprint rather than using separate discrete components.
Solution Approach 2:
The compound semiconductor structure serves multiple functions: it forms both the high electron mobility transistor for power switching and the integrated resistor for current sensing. The same barrier layer and channel layer materials provide both the HEMT's high mobility channel and the resistor's precise sensing element, eliminating the need for separate component types.
2Measurement precision
If a discrete current sensing resistor is used, then current sensing function is achieved, but manufacturing cost increases
Solution Approach 1:
The patent merges the current sensing resistor with the HEMT device structure by forming the resistor within the same semiconductor layer system. The resistor is created using the same compound semiconductor barrier layer and channel layer that form the HEMT, integrating both functions into a single device footprint rather than using separate discrete components.
Solution Approach 2:
The patent changes the material parameter from conventional silicon-based resistors to compound semiconductor-based resistors with two-dimensional electron gas. This material parameter change provides more precise resistance characteristics for current sensing while allowing integration into the same fabrication process flow, reducing manufacturing complexity and cost.
3Ease of manufacture
If silicon-based resistors are used, then fabrication is simpler, but resistance precision and robustness are inferior
Solution Approach 1:
The patent changes the material parameter from conventional silicon-based resistors to compound semiconductor-based resistors with two-dimensional electron gas. This material parameter change provides more precise resistance characteristics for current sensing while allowing integration into the same fabrication process flow, reducing manufacturing complexity and cost.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach saves layout area, enhances resistance precision and robustness compared to silicon-based resistors, and reduces manufacturing costs by integrating resistor and HEMT processes, allowing for accurate high-voltage side current sensing without additional photoresist layers.
Implementation Method 1
A HEMT is a field effect transistor having a two dimensional electron gas (2DEG) layer close to a junction between two materials with different energy gaps (i.e., a hetero-junction). The 2DEG layer is used as the transistor channel
Implementation Method 2
Compared with MOSFETs, HEMTs have a number of attractive properties, such as high electron mobility, the ability to transmit signals at high frequencies, high breakdown voltage and low on-resistance
Implementation Method 3
A HEMT is a field effect transistor having a two dimensional electron gas (2DEG) layer close to a junction between two materials with different energy gaps (i.e., a hetero-junction)
Data Source
AI summary
A semiconductor device includes a high electron mobility transistor (HEMT) disposed in an annular active element region, and a resistor disposed in a passive element region surrounded by the annular active element region. The HEM includes a first portion of a compound semiconductor barrier layer stacked on a first portion of a compound semiconductor channel layer. A source electrode, a gate electrode, and a drain electrode are disposed on the first portion of the compound semiconductor barrier layer. The resistor includes a second portion of the compound semiconductor barrier layer stacked on a second portion of the compound semiconductor channel layer. An input terminal electrode is disposed on the second portion of the compound semiconductor barrier layer and located at the center of the passive element region.