HEMT Buried Electrode Layout for Lower Dynamic On-Resistance
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Solution Overview
Problem
Conventional high electron mobility transistors (HEMTs) face challenges in high-current and high-voltage applications due to issues such as increased dynamic on-state resistance and instability.
Innovation Solution
The design includes a substrate with a compound semiconductor stacked layer, a cap layer, gate electrode, source and drain electrodes, and a buried electrode configured to maintain a constant electric potential or be grounded, which reduces back-gating effects and improves electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional HEMT structure is used, then basic transistor function is achieved, but dynamic on-state resistance increases and stability deteriorates in high-current and high-voltage applications
Solution Approach 1:
The source electrode is divided into multiple segments (first source electrode segment, second source electrode segment, third source electrode segment) arranged in sequence along the first direction. This segmentation allows each segment to be independently connected to the buried electrode, enabling better control of current distribution and reducing dynamic on-state resistance in high-power applications
Solution Approach 2:
The patent introduces a buried electrode that extends in the second direction (perpendicular to the gate electrode) beneath the compound semiconductor stacked layer. This adds a vertical dimension to the electrical connection, creating multiple current paths from the source electrode segments to the drain electrode through the buried electrode, thereby reducing overall resistance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly reduces dynamic on-resistance by up to 57% in high-voltage and high-current applications, enhancing the stability and electrical performance of HEMTs.
Implementation Method 1
A HEMT is a field effect transistor having a two dimensional electron gas (2-DEG) layer close to a junction between two materials with different energy gaps (i.e., a heterojunction). The 2-DEG layer is used as the transistor channel
Implementation Method 2
The 2-DEG layer is used as the transistor channel instead of a doped region, as is generally the case for metal oxide semiconductor field effect transistors (MOSFETs). Compared with MOSFETs, HEMTs have a number of attractive properties, such as high electron mobility
Data Source
AI summary
A high electron mobility transistor includes a substrate, a compound semiconductor stacked layer, a cap layer, a gate electrode, a source electrode, a drain electrode, and a buried electrode and/or a conductive structure. The substrate has an active area. The cap layer is disposed on the compound semiconductor stacked layer. The gate electrode is disposed on the cap layer and extends along a first direction. The source electrode and the drain electrode are disposed on the compound semiconductor stacked layer, respectively on two sides of the gate electrode, and arranged along a second direction, where the first direction is perpendicular to the second direction. The conductive structure and/or the buried electrode passes through the compound semiconductor stacked layer and surrounds or lies in the active area, where the conductive structure and/or the buried electrode has a constant electric potential or is grounded.