HEMT Layer Structure for High Drive Current and Low Leakage
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Solution Overview
Problem
Existing high electron mobility transistors (HEMTs) face challenges in achieving high drive current and reducing leakage current, which limits their performance.
Innovation Solution
The HEMT structure includes a substrate, buffer layers, a barrier layer, a doped structure, a spacer, and an insulating layer, with specific materials like gallium nitride and aluminum gallium nitride, and a gate electrode configuration to enhance electron mobility and reduce leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional HEMT structures are used, then manufacturing is simpler, but drive current is insufficient and leakage current is high
Solution Approach 1:
The HEMT structure is divided into multiple functional layers including first and second buffer layers with different compositions, a barrier layer, and a doped structure. This segmentation allows each layer to be optimized independently for electron mobility and leakage control, achieving high drive current while managing structural complexity through modular design
Solution Approach 2:
Different regions of the HEMT structure have different material compositions and doping levels. The first buffer layer has a different Al composition than the second buffer layer, and the doped structure has localized P-type doping. This local quality variation enables simultaneous optimization of electron mobility in channel regions and leakage suppression in other regions
2Reliability
If conventional HEMT structures are used, then device structure is simpler, but leakage current is high
Solution Approach 1:
A doped structure surrounded by the barrier layer is introduced as an intermediary element. This doped structure, with P-type doping, acts as a mediator to control and reduce leakage current by modifying the electric field distribution and carrier concentration in critical regions, while the barrier layer provides additional isolation
Solution Approach 2:
The HEMT employs composite material structures including III-V compound semiconductors with different Al compositions (e.g., AlGaN barriers on GaN buffers), polysilicon or silicon dioxide insulating layers, and P-doped GaN regions. These composite materials work together to suppress leakage current through combined effects of band alignment, doping profiles, and dielectric isolation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure improves drive current and reduces leakage current, enhancing the overall performance of the HEMT.
Implementation Method 1
a gate electrode formed within the spacer through the insulating layer, through the second buffer layer and partially into the barrier layer
Implementation Method 2
The doped structure may comprise P-doped gallium nitride
Data Source
AI summary
A High-Electron-Mobility-Transistor that may include a substrate. A first buffer layer formed on the substrate. A barrier layer formed on the first buffer layer. A doped structure surrounded by the barrier layer. A second buffer layer formed on the barrier layer. A spacer formed on a portion of the doped structure. An insulating layer formed over the second buffer layer. A gate electrode formed within the spacer through the insulating layer, through the second buffer layer and partially into the barrier layer, the gate electrode connected to the doped structure. A drain terminal formed at a first side of the gate electrode. A source terminal formed at a second side of the gate electrode.