HEMT-GaN LED Integration via 2DEG Layer
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current high electron mobility transistors do not effectively integrate light emitting capabilities with high electron mobility, limiting their application in multi-functional devices that require both high-frequency and light emission.
Innovation Solution
A structure combining a high electron mobility transistor (HEMT) region and a gallium nitride light emitting diode (GaN-LED) region, connected through a two-dimensional electron gas (2DEG) layer, allowing for electron and hole combination to generate light and controlled by gate voltage for brightness adjustment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a traditional HEMT structure is used, then high electron mobility and high-frequency performance are achieved, but light emitting capability is lost
Solution Approach 1:
The patent merges a HEMT structure with a GaN-LED structure into a single integrated device. The HEMT region provides high electron mobility and high-frequency performance, while the GaN-LED region provides light emitting capability. Both regions share common layers including the buffer layer, barrier layer, and 2DEG layer, achieving functional integration without sacrificing performance in either domain.
2Adaptability or versatility
If a traditional GaN-LED structure is used, then light emitting capability is achieved, but high electron mobility and high-frequency performance are lost
Solution Approach 1:
The patent integrates a GaN-LED structure with a HEMT structure, where the LED region maintains its light emitting functionality through the p-type semiconductor layer and 2DEG layer, while the HEMT region contributes high electron mobility characteristics. The shared 2DEG layer serves both light generation and high-frequency signal processing functions.
3Reliability
If separate HEMT and LED devices are used, then each device can be optimized for its specific function, but device complexity and integration requirements increase
Solution Approach 1:
The patent combines HEMT and LED functions into a single monolithic structure that shares common layers including the buffer layer, barrier layer, and 2DEG layer. This integration reduces the number of discrete components and interconnections required, while maintaining optimized performance for both high-frequency operation and light emission through carefully designed region-specific structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the integration of high-frequency and light emitting functionalities in a single device, enhancing the versatility and efficiency of the structure by utilizing the 2DEG layer for current flow and light generation.
Implementation Method 1
A two-dimensional electron gas (2 DEG) layer is present in each of the HEMT region and the LED region. The HEMT region is coupled to the LED region through the 2 DEG layer.
Data Source
AI summary
A structure of high electron mobility light emitting transistor comprises a substrate, a HEMT region disposed on the substrate, and a gallium nitride LED (GaN-LED) region disposed on the substrate. A two-dimensional electron gas layer is present in each of the HEMI region and the LED region, and the HEMT region is coupled to the LED region through the two-dimensional electron gas layer.