Solid-State Devices TRIZ Cases

Segmented transparent conductive film patterns prevent upper layer insulation delamination by covering electrode end faces to reduce stress concentration.

Pre-curing UV adhesive film beyond wafer edges prevents hydrocarbon redeposition during plasma etching to maintain chip integrity.

CAMEO reduces experiment counts by 10-fold, identifying Ge4Sb6Te7 with superior optical contrast.

Optimized annealing balances surface roughness with shape recovery, preventing creasing in rolled displays.

A two-dimensional material layer extends onto an insulating film to amplify photocurrent via the optical gate effect.

In-situ atomic layer deposition forms the RRAM bottom electrode alongside the dielectric storage layer.

Segmented conductive layers with a unified plug eliminate CMP steps, reducing thermal undercut risks while simplifying fabrication.

A flexible display device features a dual-region panel with an opening in the housing for external visibility.

Segmented metal oxide and alloy layers resolve conductivity versus transmittance trade-offs in micro light emitting diode display apparatuses.

A display panel uses a quantum dot color conversion layer to transform blue light into red and green wavelengths.

Selective deposition forms ReRAM stack patterns to maintain electrode interface area, preventing switching characteristic deterioration.

An integrated optical film lamination combines circular polarizer, water-oxygen resistant, and color resistant films on a supporting substrate.

A high electron mobility transistor structure merges with a gallium nitride light emitting diode region through a shared two-dimensional electron gas layer.

Segmented trench patterning increases process margins for data storage devices by resolving integration-reliability trade-offs.

A light-emitting device positions a planarization layer inward of the light-emitting layer edge to reduce frame width.

Segmented bonding pads in separate conductive layers resolve adhesion failures caused by mismatched thermal expansion coefficients during manufacturing.

Trenches divide the semiconductor laminate into independent regions to reduce thermal stress and warpage during fabrication.

A gate driver circuit outputs scan signals to adjacent rows only, reducing energy use in partial display modes.

Self-defined memory elements form at nanowire contacts to store data, eliminating separate diodes and reducing alignment errors.

Switching units on the array substrate route time-division signals, resolving display and touch IC compatibility issues.

Corner markers on flexible substrates measure expansion and shrinkage to correct cutting positions, maintaining stable dimensions after peeling.

Dual light shielding layers filter diffusedly reflected light to enable accurate fingerprint detection in display panels.

Asymmetric carbon nanotube electrodes enable Schottky diode rectification, eliminating complex chemical doping steps while maintaining high performance.

Different control gate materials reduce drain-induced barrier lowering and improve programming speed.

A dummy selection gate line applies controlled voltage levels to prevent dielectric breakdown and leakage current in resistance change memory devices.

A photoelectric conversion device positions a first wiring layer to overlap the control electrode in plan view.

A dual-host organic electroluminescence emitter combines specific host materials to manage exciton dynamics within the device structure.

Phenyl-containing polyorganosiloxanes cure into a crosslinked silicone product that prevents delamination and fracture under thermal stress.

A two-step plasma etching method uses fluorine and bromine gases to process silicon films.

An ultraviolet protective film blocks plasma irradiation rays to prevent organic layer deterioration during dry etching patterning.

A radiation sensor replaces bond wires with a direct contact layer on the printed circuit board to reduce structural height.

Formula I organic compounds modify molecular structures to achieve saturated color emission, resolving trade-offs between color purity and device complexity.

A thin film transistor array substrate uses a transparent conductive layer for the storage capacitor electrode to secure sufficient capacitance area.

Complete amorphization of direct silicon bonded layers followed by low-temperature recrystallization reduces lateral boundary spread below 40 nanometers.

Light protection coating with openings directs perpendicular radiation to optical devices within semiconductor packages.

Merged magnetization orientations in a single TMR device resolve the contradiction between sensing accuracy and fabrication cost.

In-doped chalcogenide selector layer reduces leakage current despite decreased thickness.

Segmenting the device into stacked units lowers current density, preventing efficiency roll-off and exciton diffusion.

Dual-material cavity redirects inclined light via total internal reflection, preventing absorption by black housings and reducing unnecessary heating.

Non-planar ferroelectric memory cells integrate curved materials with transistor gates to reduce critical voltage without increasing cell size.

A quantum dot electroluminescent element uses a composite light-emitting layer with an intermediate hole transport and electron blocking layer to enhance efficiency.

Flat structure layer compensates for liquid dielectric unevenness, achieving 0.5 μm pad coplanarity to resolve assembly yield bottlenecks.

Photocatalytic hole injection layers remove bank residues with 300-400 nm UV light, preserving fluorine resin lyophobicity for large-panel manufacturing.

A display device positions a driving circuit on a second display area to extend the image region.

Multiplexing circuits connect sub-memory cell arrays to pads, compensating for defective cells and improving manufacturing yield.

A flexible array substrate uses a protection layer with higher Young's modulus to distribute stress on signal lines.

Control logic tracks syndrome changes across read-modify-write cycles to determine error attributes and enable soft post-package repair in 3D stacked memory.

Tapered lens walls guide self-supporting LED die insertion to eliminate misalignment defects and reduce manufacturing costs without high-precision machinery.