Resistance Change Memory Dummy Gate Voltage Control

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Solution Overview

Problem

Resistance change type memory devices face challenges in preventing dielectric breakdown and leakage current between adjacent selection gate lines, which affects the reliability and performance of the memory cells.

Innovation Solution

The implementation of a dummy selection gate line adjacent to the selection gate lines, with controlled voltage application based on the selection state of the adjacent selection gate line, helps in reducing the potential difference and preventing dielectric breakdown, thereby improving the memory's reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a dummy selection gate line is added adjacent to the selection gate lines, then dielectric breakdown and leakage current are prevented, but device complexity increases

Engineering Contradiction:

Improveprevention of dielectric breakdownVSAvoidnumber of selection gate lines

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

A dummy selection gate line is introduced as an intermediary element between adjacent selection gate lines. This dummy gate line acts as a mediator to reduce the potential difference between neighboring selection gate lines, thereby preventing dielectric breakdown and leakage current without requiring fundamental changes to the memory cell structure

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The dummy selection gate line is configured in advance to have a controlled voltage that is lower than the selected selection gate line voltage. This preliminary voltage configuration prevents dielectric breakdown before it can occur during normal operation, proactively addressing the reliability issue

Inventive Principle:

Principle #10Preliminary action

2Reliability

If voltage is applied to control the dummy selection gate line, then leakage current is reduced, but energy consumption increases

Engineering Contradiction:

Improvereduction of leakage currentVSAvoidenergy consumption

Core Design Contradiction:

ReliabilityVSUse of energy by moving object

Solution Approach 1:

The voltage control is applied locally and selectively only to the dummy selection gate line, rather than uniformly to all gate lines. The dummy gate line receives a specifically controlled voltage level that is sufficient to prevent leakage current but minimized to reduce energy consumption

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The voltage parameter of the dummy selection gate line is dynamically adjusted based on the selection state of adjacent gate lines. When a selection gate line is active, the dummy gate line voltage is set to an appropriate level to prevent leakage; when no gate line is selected, the voltage can be reduced or set to zero, optimizing energy consumption

Inventive Principle:

Principle #35Parameter changes

Data Source

PatentUS10418099B2Resistance change type memory

Publication Date: 2019.09.17 KIOXIA CORP

AI summary

A resistance change type memory device includes a first memory cell at a crossing of a first bit line and a first word line, a second memory cell at a crossing of a second bit line and a second word line, a first selection gate line connected to the first bit line, a second selection gate line connected to the second bit line, a dummy gate line adjacent to the first selection gate line, and a control circuit configured to apply a first voltage to the first selection gate line and a second voltage smaller than the first voltage to the dummy gate line when the first selection gate line is selected, and the second voltage or a third voltage smaller than the second voltage to the first selection gate line and the third voltage to the dummy gate line when the second selection gate line is selected.