Quantum Dot Electroluminescent Element Composite Layer Design

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Solution Overview

Problem

Quantum dot electroluminescent elements experience a decrease in light-emitting efficiency as voltage increases, due to electron accumulation and non-radiative recombination processes, leading to reduced brightness and purity of emitted light.

Innovation Solution

A quantum dot electroluminescent element is designed with a composite light-emitting layer comprising two quantum dot light-emitting layers separated by a hole transport and electron blocking intermediate layer, which prevents electron escape at low voltage and allows recombination in the adjacent layer at higher voltages, expanding the recombination region and maintaining efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If voltage is increased to improve brightness output, then light output increases, but light-emitting efficiency decreases due to electron accumulation and non-radiative recombination

Engineering Contradiction:
Improvelight outputVSAvoidlight-emitting efficiency
Core Design Contradiction:
Illumination intensityVSLoss of energy

Solution Approach 1:

The single light-emitting layer is divided into multiple quantum dot light-emitting layers with different thicknesses. This segmentation allows electrons to recombine in different layers at different voltage levels, distributing the recombination events across multiple interfaces and reducing electron accumulation in any single layer, thereby maintaining high light-emitting efficiency while achieving desired brightness output.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different quantum dot light-emitting layers are designed with different thicknesses to create local variations in electron-hole recombination characteristics. Thinner layers facilitate electron transport and reduce accumulation, while thicker layers provide sufficient recombination zones. This local quality differentiation optimizes the balance between light output and efficiency across the entire device structure.

Inventive Principle:
Principle #3Local quality

2Device complexity

If a single quantum dot light-emitting layer is used, then the structure is simple, but electron accumulation occurs at high voltage reducing brightness purity

Engineering Contradiction:
ImprovestructureVSAvoidbrightness purity
Core Design Contradiction:
Device complexityVSIllumination intensity

Solution Approach 1:

The light-emitting structure is segmented into multiple quantum dot light-emitting layers, each contributing to the overall emission. This segmentation prevents electron accumulation by distributing recombination events across multiple layers, thereby maintaining brightness purity even at high voltage operation, while the cumulative effect of multiple layers still provides sufficient light output.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The problem of electron accumulation in a single layer is solved by adding the dimension of multiple layers stacked in series. This dimensional change transforms a two-dimensional single-layer structure into a three-dimensional multi-layer structure, providing additional spatial zones for electron-hole recombination and preventing charge accumulation that would otherwise degrade brightness purity.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances light-emitting efficiency by increasing the number of electrons participating in recombination, reducing non-radiative processes, and maintaining high brightness and purity of emitted light across varying voltages.

Implementation Method 1

the intermediate layer is configured to transport holes and block electrons

Methodology Applied
Scientific EffectHole transport: Conduction (electrical)

Implementation Method 2

the intermediate layer is configured to transport holes and block electrons

Methodology Applied
Scientific EffectElectron blocking: Electrical Resistance

Implementation Method 3

Quantum dot electroluminescent diode (QLED) is a new electronic element for display applications, which directly injects electrons and holes into quantum dot emitters to achieve electroluminescence

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Implementation Method 4

expanding the recombination region and maintaining efficiency

Methodology Applied
Scientific EffectElectron-hole recombination: Electroluminescence

Data Source

PatentUS11444257B2Quantum dot electroluminescent element, display panel and display device
Publication Date: 2022.09.13 BEIJING BOE TECH DEV CO LTD
  • US11444257B2 patent drawing
  • US11444257B2 patent drawing
  • US11444257B2 patent drawing

AI summary

A quantum dot electroluminescent element, a display panel, and a display device are provided. The quantum dot electroluminescent element includes an anode layer, a composite light-emitting layer, and a cathode layer which are stacked. The composite light-emitting layer includes at least two quantum dot light-emitting layers which are stacked, and an intermediate layer arranged between every two adjacent ones of the at least two quantum dot light-emitting layers; the intermediate layer is configured to transport holes and block electrons.