Segmented Semiconductor Laminate for Warpage Control
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Solution Overview
Problem
Large-sized semiconductor light emitting elements face issues with warpage and reduced light extraction efficiency due to thermal expansion coefficient differences and increased light reflection, leading to defective regions and poor yield.
Innovation Solution
The semiconductor laminate is divided into multiple regions by trenches, reducing stress and warpage, and shortening the light's path to emission points, thereby improving light extraction efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the size of the semiconductor light emitting element is increased, then the light output area is improved, but warpage is more likely to occur due to thermal expansion coefficient differences
Solution Approach 1:
The semiconductor laminate is divided into multiple semiconductor regions (first, second, third regions) with different thickness configurations. The p-type semiconductor layer has different thicknesses in different regions, creating segmentated thickness variations that reduce overall warpage while maintaining large light output area.
2Area of stationary object
If the size of the semiconductor light emitting element is increased, then the light output area is improved, but defective regions are more likely to be generated in the semiconductor laminate
Solution Approach 1:
The semiconductor laminate is divided into multiple independent semiconductor regions. This segmentation isolates potential defects to specific regions, preventing a single defect from rendering the entire large-sized element defective, thereby improving overall reliability while maintaining large light output area.
3Area of stationary object
If the size of the semiconductor light emitting element is increased, then the light output area is improved, but light extraction efficiency is reduced due to increased reflection
Solution Approach 1:
The semiconductor laminate is divided into multiple semiconductor regions with different thicknesses. This segmentation shortens the average distance light travels through the laminate, reducing the number of reflections and improving light extraction efficiency while maintaining large overall light output area.
Solution Approach 2:
Different regions of the semiconductor laminate have different local thickness qualities. The p-type semiconductor layer has varying thicknesses in different regions, creating local quality variations that optimize light extraction in each region while maintaining overall large area performance.
4Loss of energy
If the thickness of the p-type semiconductor layer is reduced to improve light extraction, then light extraction efficiency is improved, but warpage control becomes more difficult
Solution Approach 1:
The p-type semiconductor layer is divided into multiple regions with different thicknesses. This segmentation allows each region to have optimized thickness for light extraction while the overall structure maintains warpage control through the combination of different thickness regions.
Solution Approach 2:
The p-type semiconductor layer has different local thickness qualities in different regions. This local quality variation enables optimized light extraction in each region while the overall thickness distribution maintains structural stability and warpage control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a large-sized laminated semiconductor light emitting element with reduced warpage and enhanced light extraction efficiency, increasing the yield of usable semiconductor light emitting elements.
Implementation Method 1
warpage is caused by the difference in a thermal expansion coefficient between the growth substrate and the semiconductor element
Implementation Method 2
A part of light generated by an active layer of the semiconductor laminate is laterally transmitted, while being reflected by the upper and lower surfaces of the semiconductor laminate
Implementation Method 3
When the light is reflected (in particular, reflected off an interface between the substrate and the semiconductor laminate), the light is absorbed
Data Source
AI summary
A semiconductor light emitting element comprises a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated; and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench penetrating the p-type semiconductor layer, the active layer and the n-type semiconductor layer.