HEMT and Micro-LED Integration on Segmented Substrate

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Solution Overview

Problem

The manufacturing of high-resolution display devices using micro-LEDs requires efficient transfer technologies for small LED chips and precise arrangement, which is challenging due to the need for high-level transfer techniques.

Innovation Solution

A semiconductor device design incorporating a substrate with distinct regions, a separation layer, high electron mobility transistors (HEMT) devices, and light-emitting devices, along with insulating patterns and spacer layers, to facilitate the integration and manufacturing of high-resolution display devices with improved productivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If high-resolution display devices are manufactured using micro-LEDs, then display resolution is improved, but manufacturing complexity and transfer technology requirements increase

Engineering Contradiction:

Improvedisplay resolutionVSAvoidtransfer technology complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The substrate is divided into a first region for HEMT devices and a second region for light-emitting devices, with a separation layer between them. This segmentation allows independent optimization of each region's manufacturing process, reducing overall transfer technology complexity while maintaining high display resolution

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

A transfer layer is introduced as an intermediary component between the HEMT devices and the light-emitting devices. This transfer layer facilitates the transfer of small LED chips from the first region to the second region, simplifying the transfer process and reducing manufacturing complexity while enabling high-resolution display fabrication

Inventive Principle:

Principle #24Intermediary (Mediator)

2Manufacturing precision

If small LED chips are arranged in appropriate locations with high-level transfer technology, then display resolution is improved, but manufacturing productivity decreases

Engineering Contradiction:

Improvechip arrangement precisionVSAvoidmanufacturing productivity

Core Design Contradiction:

Manufacturing precisionVSProductivity

Solution Approach 1:

The HEMT devices are preliminarily formed in the first region with appropriate thickness and structural configuration before the transfer process. This preliminary preparation enables more efficient transfer operations and subsequent integration, improving both chip arrangement precision and manufacturing productivity

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent replaces complex mechanical transfer operations with a more efficient transfer mechanism involving the transfer layer and selective removal processes. This substitution reduces manufacturing steps and improves productivity while maintaining precise chip arrangement in the display device

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Data Source

PatentUS11677061B2Semiconductor device, method of fabricating the same, and display device including the same

Publication Date: 2023.06.13 SAMSUNG ELECTRONICS CO LTD

AI summary

A semiconductor device includes a substrate including a first region and a second region that are arranged in a first direction that is parallel to an upper surface of the substrate; a separation layer provided on the first region of the substrate; a high electron mobility transistor (HEMT) device overlapping the separation layer in a second direction that is perpendicular to the upper surface of the substrate; a light-emitting device provided on the second region of the substrate; and a first insulating pattern covering a side surface of the HEMT device, wherein the first insulating pattern overlaps the separation layer in the second direction.