Solid-State Devices TRIZ Cases

Shield electrode prevents current leakage between adjacent sub-pixels, inhibiting crosstalk and extending organic EL element lifetime.

Vertical trench depth controls channel length to resolve lithography limits and reduce field junction leakage current.

A connection member penetrates the organic layer to electrically link the auxiliary electrode with the second electrode layer.

A hybrid field-effect transistor combines a silicon carbide drift region with an III-nitride channel to reduce on-state resistance.

Segmented reflective electrodes and a tunnel junction layer improve deep ultraviolet light emission by reducing absorptivity and blocking current flow.

A substrate with multiple trenches of varying depths hosts distinct photodiodes to detect specific wavelength ranges.

A saddle fin shaped gate structure enhances current drivability in semiconductor devices.

A solid-state imaging pixel uses a buried gate electrode to enable efficient charge transfer in rear-irradiation architectures.

Laser-ablated nucleation inhibiting layers enable thick metal cathodes that lower surface resistance and improve brightness uniformity in large OLED panels.

A charge storage film uses spatial boron concentration gradients to optimize dielectric properties and trap levels.

Matching directional properties between common layers and the organic light emitting layer prevents charge accumulation at interfaces, extending device life.

Oversized via masks extend across metal line boundaries to resolve overlay errors, minimizing pitch and preventing shorts.

A flexible OLED display device bends its substrate and encapsulation layer to create a compact folded structure.

Vertical stacking separates neighboring cells to eliminate programming disturbs and thermal crosstalk without expanding unit cell area.

A signal line with an included angle penetrates a conducting wire notch to connect the display region.

Metal borate complex dopants balance charge injection and transport in the semiconducting layer, resolving efficiency and lifetime trade-offs.

Photoresist patterning replaces CVD masks to prevent deformation and ensure accurate coating.

Vertical PN diodes with sidewall P-type patterns on N-type pillars increase junction area, resolving low operating current and integration limits.

A magnetic field compensation device uses bar-shaped flux concentrators and a control unit to adjust compensating current for accurate primary field determination.

Integrates fingerprint sensing electrodes directly into the array substrate gate lines to consolidate display and biometric functions.

Sequential testing of stacked semiconductor chips via shared through electrodes prevents instantaneous power drops while maintaining full coverage.

A semiconductor memory fabrication method uses basic memory modules interconnected via controllable lines to produce chips of varying capacities.

Ultrasonic waves adhere flexible substrates to supporting plates using adhering particles without additional films.

A detection substrate employs a segmented photoelectric conversion section to enhance radiation resistance and extend service life.

A bidirectional Schottky diode switch integrates semiconductor layers to handle high driving currents.

An embedded dielectric structure underlies active portions of a MOS device to provide electrical isolation.

An electron injection layer using lanthanide iodide compounds reduces energy barriers at the cathode interface, improving tunneling efficiency and luminance.

A thin film transistor substrate uses a channel protective film to form distinct threshold voltages, resolving yield issues on large substrates.

Adjusting conductor and dielectric layer thicknesses in 3D memory stacks to compensate for channel width variations.

An Al2O3 tunnel dielectric and metal-III-V alloy resolve interface quality challenges in vertical NAND fabrication.

A memory device internal command generator manages a shared common processing channel across multiple cell groups.

Iridium complex dopants in fused hetero-aromatic hosts enable rapid exciton transfer for high luminous efficiency.

Patterned black resist layers prevent ghost and flare defects by absorbing stray light, eliminating separate shielding members and reducing production costs.

Plasma treatment removes organic residues from electrodes while preserving bank hydrophobicity, simplifying inkjet printing and enhancing OLED display quality.

Segmenting the substrate separates transistor fabrication from micro-LED transfer, resolving complexity in high-resolution display production.

A transflective film with a cholesteric liquid crystal layer reduces device visibility without compromising image clarity or design flexibility.

Fluorene-based thermoplastic resin achieves broadband wavelength dispersion while maintaining low photoelastic coefficient to ensure reliability in thin films.

A folded protective cover uses selective glass hardening to protect OLED displays while allowing structural flexibility.

A pixel unit manufacturing method forms a data line before filling conductors into contact holes to prevent electrical shorts.

Integrating a ferroelectric capacitor with a MOS transistor diffusion region reduces fabrication costs and defect density.

A buffer insulating layer with low Young's modulus absorbs bonding stress, resolving thermal expansion mismatches that impair micro LED display yield.

A ferroic voltage switchable dielectric material transitions to a conductive state to shunt harmful currents away from embedded circuit components.

Ammonia and silicane gases react with transparent thin films to create non-transparent overlay marks, resolving alignment precision issues in photolithography.

CVD sidewall spacers modify gate overhangs to reduce inter-gate leakage current and enhance breakdown voltage.

A photosensitive resin composition cures at low temperatures to form anti-reflective films for organic light-emitting displays.

Segmented spacer parts disconnect the encapsulation layer, preventing crack propagation into the display region during irregular panel cutting.

A carbon nitride layer protects phase change memory electrodes during chemical mechanical polishing to maintain surface uniformity.

Interleaved OLED cathode blocks serve as touch electrodes, eliminating additional insulation layers and reducing manufacturing complexity.

Amorphous silicon thin film transistor paired with an electron injection dipole layer enables efficient charge carrier movement in organic light emitting diode displays.

Cyclic epitaxial growth and ion implantation improve contact image sensor quantum efficiency.