Hetero-Plane Flash Memory With Segmented Word Line Layers

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Solution Overview

Problem

Non-volatile memory devices face challenges in increasing storage capacity while maintaining performance, as adding more word line layers can decrease performance and smaller planes are not cost-scalable, and combining different types of planes introduces layout issues with peripheral circuitry control.

Innovation Solution

A hetero-plane data storage structure is implemented, combining different types of planes with optimized peripheral circuitry, where high-performance planes are integrated with cost-scalable planes, with the peripheral circuitry arranged in a CMOS under array (CUA) architecture underneath the memory cells, and bonding pads for interface connections, allowing for efficient storage and processing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If additional word line layers are added to increase storage capacity, then storage capacity is improved, but performance deteriorates

Engineering Contradiction:
Improvestorage capacityVSAvoidperformance
Core Design Contradiction:
Quantity of substanceVSSpeed

Solution Approach 1:

The memory array is divided into multiple planes, each with different numbers of word line layers. This segmentation allows some planes to have more word lines for capacity while others have fewer for performance, resolving the contradiction between storage capacity and performance.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different planes within the same memory device are given different local qualities - specifically, different numbers of word line layers and different bit line lengths tailored to their specific performance or capacity requirements, allowing optimization of both capacity and performance simultaneously.

Inventive Principle:
Principle #3Local quality

2Speed

If smaller planes are used to minimize read latency, then performance is improved, but cost scalability deteriorates

Engineering Contradiction:
Improveread latencyVSAvoidcost scalability
Core Design Contradiction:
SpeedVSEase of manufacture

Solution Approach 1:

The memory device is segmented into different plane types - high-performance planes with fewer word lines for low latency and cost-scalable planes with more word lines for capacity. This allows the system to achieve both low latency and cost scalability by using appropriate plane types in appropriate locations.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Multiple plane types are merged into a single memory die, combining the advantages of both high-performance and cost-scalable planes. The peripheral circuitry is designed to support both plane types, achieving both low latency and cost scalability in one device.

Inventive Principle:
Principle #5Merging (Combining)

3Adaptability or versatility

If different types of planes are combined to optimize scalability and performance, then both scalability and performance are improved, but layout complexity increases

Engineering Contradiction:
Improvescalability and performanceVSAvoidlayout complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The peripheral circuitry is designed with multi-functionality to support different plane types. The same peripheral circuitry can service both high-performance planes and cost-scalable planes, reducing the need for separate dedicated circuits for each plane type and thereby reducing overall layout complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

Different plane types and their associated peripheral circuitry are merged into a unified layout. By integrating multiple plane types and sharing peripheral resources, the overall layout complexity is managed more effectively than if separate dedicated layouts were used for each plane type.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS11610625B2Hetero-plane data storage structures for non-volatile memory
Publication Date: 2023.03.21 SANDISK TECHNOLOGIES LLC
  • US11610625B2 patent drawing
  • US11610625B2 patent drawing
  • US11610625B2 patent drawing

AI summary

A flash memory die includes (i) a first subset of planes including blocks of flash memory cells connected to a first number of word line layers and a plurality of bit lines having a first length, (ii) a second subset of planes including blocks of flash memory cells connected to a second number of word line layers less than the first number of word line layers and a plurality of bit lines having a second length shorter than the first length, (iii) first peripheral circuitry implemented underneath the first subset of planes and including first sense amplifier circuitry and first peripheral control circuitry connected to the first subset of planes, and second peripheral control circuitry connected to the second subset of planes, and (iv) second peripheral circuitry implemented underneath the second subset of planes and including second sense amplifier circuitry connected to the second subset of planes.