High Pressure Ammonia Nitridation for 3D NAND Oxide Layers
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Solution Overview
Problem
Conventional plasma nitridation processes struggle to adequately nitride oxide layers in high aspect ratio features due to the short lifetime of nitrogen compounds and difficulty in penetrating deep into the features, leading to incomplete nitridation.
Innovation Solution
A processing chamber system that maintains a pressure of at least 10 atm and uses NH3 gas to enhance nitridation, with heating elements to control temperature, allowing NH3 to penetrate deeper and increase nitrogen concentration within the oxide layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional plasma nitridation is used, then nitrogen concentration on the surface of the oxide layer is improved, but nitridation completeness in high aspect ratio features deteriorates
Solution Approach 1:
The patent changes the physical and chemical parameters of the nitridation process by using NH3 gas at high pressure (at least 10 atm) instead of conventional plasma nitridation. This parameter change enables nitrogen to penetrate deeper into high aspect ratio features while maintaining adequate nitrogen concentration, resolving the contradiction between surface nitrogen concentration and nitridation completeness in deep features.
2Ease of manufacture
If conventional nitridation processes are used, then processing simplicity is improved, but penetration depth into high aspect ratio features deteriorates
Solution Approach 1:
The patent employs high pressure (at least 10 atm) NH3 gas nitridation, changing the pressure parameter from conventional low pressure to high pressure. This enables the nitrogen to penetrate deeper into high aspect ratio features while maintaining process simplicity, as the high pressure NH3 process is a straightforward single-step treatment without complex equipment modifications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system effectively increases nitrogen concentration in the oxide layer, improving nitridation efficiency and conformality, even in high aspect ratio features, by maintaining high pressure and using NH3 gas to drive the nitridation process.
Implementation Method 1
The oxide layer is exposed to NH3. The chamber pressure is maintained at a pressure of at least 10 atm while the oxide layer is exposed to NH3
Implementation Method 2
The pump device is configured to maintain the processing chamber at a pressure of at least 10 atm
Implementation Method 3
one or more heating devices, configured to heat the oxide layer to a temperature between about 600°C. and about 1200°C.
Implementation Method 4
The heating devices are disposed about the quartz envelope
Data Source
AI summary
Embodiments disclosed herein generally related to system for forming a semiconductor structure. The processing chamber includes a chamber body, a substrate support device, a quartz envelope, one or more heating devices, a gas injection assembly, and a pump device. The chamber body defines an interior volume. The substrate support device is configured to support one or more substrates during processing. The quartz envelope is disposed in the processing chamber. The quartz envelope is configured to house the substrate support device. The heating devices are disposed about the quartz envelope. The gas injection assembly is coupled to the processing chamber. The gas injection assembly is configured to provide an NH3 gas to the interior volume of the processing chamber. The pump device is coupled to the processing chamber. The pump device is configured to maintain the processing chamber at a pressure of at least 10 atm.