High Purity AlON Semiconductor Chamber Components
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Solution Overview
Problem
Existing semiconductor process chambers face corrosion issues due to highly corrosive gases, and previous solutions like aluminum oxynitride (AlON) coatings are either short-lived, expensive, or contaminated with impurities, leading to bonding failures and substrate corrosion.
Innovation Solution
The development of high purity polycrystalline AlON bodies with a gamma-AlON cubic spinel structure, synthesized using high purity milling media and calcination, to create components that withstand corrosive gases without introducing impurities that can contaminate wafers, featuring a composition of 35-45 atomic percent aluminum, 45-55 atomic percent oxygen, and 5.5-9.1 atomic percent nitrogen.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If AlON coating is applied to protect chamber components from corrosive gases, then corrosion resistance is improved, but the coating has short service life due to bonding failures
Solution Approach 1:
The invention changes the chemical composition parameters of the AlON coating by incorporating specific amounts of SiO2 (0.1-10 wt%), B2O3 (0.1-10 wt%), and Al2O3 (80-99.8 wt%) to optimize both corrosion resistance and bonding durability. This compositional adjustment resolves the contradiction by creating a coating that maintains adhesion while providing effective corrosion protection.
Solution Approach 2:
The invention creates a composite AlON coating system that combines multiple oxides (AlON, SiO2, B2O3, Al2O3) to achieve synergistic effects. The composite structure provides both the corrosion resistance of AlON and the bonding stability of the oxide mixture, eliminating the short service life problem of pure AlON coatings.
2Duration of action of stationary object
If thicker AlON coating is applied to extend service life, then durability is improved, but internal stresses cause bonding failures
Solution Approach 1:
The invention changes the physical and chemical parameters of the coating formulation by incorporating SiO2 and B2O3 modifiers that reduce internal stress development. This allows the application of thicker coatings (1-10 microns) without the bonding failures that normally occur with thick AlON layers, thus extending service life while maintaining reliability.
Solution Approach 2:
The SiO2 and B2O3 components act as intermediary substances that mediate between the coating and substrate, reducing internal stress accumulation. These intermediary materials allow thick coatings to be applied without causing bonding failures, resolving the contradiction between thickness/durability and bonding integrity.
3Ease of manufacture
If conventional milling media is used to reduce production cost, then manufacturing cost is reduced, but impurities contaminate the AlON bodies
Solution Approach 1:
The invention uses high purity alumina milling media that replicates the purity requirements of the final AlON product. By copying the purity standard of the end product in the milling media, the process ensures that no impurities are introduced during manufacturing, maintaining manufacturing precision while using commercially available high purity materials.
Solution Approach 2:
The invention creates an inert manufacturing environment by using high purity alumina milling media that does not introduce contaminants. This inert milling environment prevents impurity contamination while keeping the process simple and cost-effective, avoiding the need for expensive specialized low-impurity media.
4Device complexity
If amorphous AlON coating is applied to simplify production, then manufacturing complexity is reduced, but thermal expansion mismatch and degradation occur
Solution Approach 1:
The invention changes the thermal and structural parameters of the coating by controlling the crystallization process during firing. By adjusting firing temperature (1800-2000°C) and time, the coating transforms from amorphous to crystalline AlON structure, achieving thermal expansion compatibility and high-temperature stability while maintaining relatively simple production processes.
Solution Approach 2:
The invention utilizes phase transition from amorphous to crystalline structure during the firing process. This phase transition occurs at controlled temperatures (1800-2000°C) and transforms the coating into a thermally stable crystalline AlON structure that matches thermal expansion coefficients, eliminating degradation issues while keeping the production process straightforward.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides durable, impurity-free AlON components for semiconductor process chambers, effectively resisting corrosive gases and minimizing wafer contamination, with significantly reduced impurity levels of Si, Mg, Ca, Na, and K, ensuring reliable and clean processing.
Implementation Method 1
milling the AlON powders to reduce the particle size of the AlON powders using a high purity milling media
Implementation Method 2
AlON powders having less than 80 ppm Si, Mg, Ca, Na, and K impurities are synthesized and calcined
Implementation Method 3
polycrystalline AlON bodies which can withstand the highly corrosive gases used in such chambers
Data Source
AI summary
A method of making high purity crystalline AlON bodies by synthesizing and calcining AlON powders having less than 80 ppm Si, Mg, Ca, Na, and K impurities. The AlON powders are milled to reduce the particle size of the AlON powders using a high purity milling media. An AlON body is formed from the milled AlON powders. Such AlON bodies are particularly suitable for semiconductor process chamber components.