High-Purity Tin (IV) Alkoxide Compounds for EUV Lithography
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Solution Overview
Problem
Existing precursors for microelectronic device manufacturing, particularly in extreme ultraviolet (EUV) lithography, suffer from impurities and inefficiencies in forming high-purity tin-containing films.
Innovation Solution
Development of high-purity tin (IV) alkoxide compounds with purities of at least 95%, synthesized through solvent-free or minimal solvent methods, using specific reagents to form tin (IV) alkoxide compounds from tin (IV) carboxylates or amides, suitable for forming tin-containing films via deposition processes like CVD and ALD.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional precursor methods are used for EUV lithography, then the manufacturing process can be maintained, but impurities are introduced and film quality deteriorates
Solution Approach 1:
The patent changes the chemical parameters of the precursor compounds by using specifically designed tin (IV) alkoxide compounds with defined molecular structures (Sn(OR)4 where R is alkyl, aryl, or silyl groups). This parameter change in compound structure enables achievement of at least 95% purity in the deposited tin films, eliminating the impurity issues associated with conventional precursors while maintaining compatibility with existing EUV lithography manufacturing processes.
2Manufacturing precision
If high-purity tin compounds are synthesized using traditional solvent-based methods, then purity can be achieved, but process complexity and time increase
Solution Approach 1:
The patent extracts and eliminates the solvent step from the synthesis process entirely. By using direct reaction methods where tin (IV) carboxylate or amide compounds react with alkoxides or alcohols without requiring solvent media, the process achieves high purity (at least 95%) tin (IV) alkoxide compounds while significantly reducing process complexity and synthesis time compared to traditional solvent-based approaches.
3Productivity
If existing precursor compounds are used, then the manufacturing process is simple, but the formation of high-purity tin-containing films is inefficient
Solution Approach 1:
The patent introduces tin (IV) alkoxide compounds as intermediary precursors that serve as the active species in the film formation process. These intermediaries are specifically designed to decompose cleanly during deposition, enabling simultaneous achievement of high film purity (at least 95%) and efficient film formation in EUV lithography manufacturing processes, overcoming the inefficiency of conventional precursors.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The high-purity tin compounds enable the formation of high-quality tin films for microelectronic devices, reducing impurities and enhancing the performance of EUV lithography processes.
Implementation Method 1
The high-purity tin compounds enable the formation of high-quality tin films for microelectronic devices
Implementation Method 2
suitable for forming tin-containing films via deposition processes like CVD and ALD
Data Source
AI summary
Compositions comprising tin (IV) alkoxide compounds useful for extreme ultraviolet lithography are provided. The compositions comprise a highly pure tin (IV) alkoxide compound, with low levels of impurities, including, for example and without limitation, at least one of halide impurities, ammonium impurities, or any combination thereof. Halide-free methods for synthesizing the tin (IV) alkoxide compounds are also provided. Various other compositions and methods are provided.