Positive-Tone High-Silicon Dielectric for Direct Metal Interconnects
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Solution Overview
Problem
Existing methods for forming integrated circuits, particularly those using photoresists and silicon-based dielectrics, are cumbersome and time-consuming, requiring multiple steps such as baking and curing, and do not efficiently form metal interconnects in dielectric materials.
Innovation Solution
A method involving a dielectric precursor composition comprising a silicon-containing polymeric resin, a catalyst that is deactivated by acid, and a photoacid generator, where exposure to radiation generates acid to form a cured dielectric resin, allowing for direct patterning and metal filling without etching or photoresists.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional photoresist and etching methods are used to form metal interconnects, then the process is well-established and reliable, but the manufacturing complexity and time consumption increase significantly
Solution Approach 1:
The patent combines the dielectric material and photoresist functions into a single integrated circuit layer. The dielectric precursor composition contains both the dielectric polymer and photoactive compounds, allowing simultaneous achievement of dielectric properties and photo-patterning capability, thereby eliminating the need for separate photoresist application and etching steps
Solution Approach 2:
The dielectric precursor composition serves multiple functions: it acts as both the dielectric material and the photoresist. This multi-functional material enables direct patterning through photoexposure without requiring separate photoresist layers or etching processes, reducing manufacturing complexity while maintaining reliability
2Reliability
If multiple baking and curing steps are introduced to improve dielectric material properties, then the material performance improves, but the manufacturing time and process complexity increase
Solution Approach 1:
The patent merges the curing process into the photoexposure step. The photoacid generator produces acid upon light exposure, which simultaneously catalyzes the condensation reaction of silicon-containing polymeric resin to form the cured dielectric. This eliminates the need for separate baking and curing steps, reducing manufacturing cycle time while maintaining dielectric material performance
Solution Approach 2:
The patent replaces thermal curing (baking) with photochemical curing. Instead of using heat to initiate and complete the dielectric formation process, photoexposure generates acid that catalyzes the condensation reaction at lower temperatures, significantly reducing the time and energy required while achieving the same dielectric properties
3Device complexity
If photoresist and etching steps are eliminated to simplify the process, then manufacturing complexity decreases, but the ability to precisely form patterns may be compromised
Solution Approach 1:
The patent changes the chemical parameters of the dielectric precursor composition by incorporating photoactive compounds and photoacid generators. This enables the material to respond to photoexposure by generating acid that catalyzes localized condensation, allowing precise pattern formation through optical means without requiring etching, thus maintaining manufacturing precision while reducing process complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reduces the complexity and cost of forming metal interconnects by eliminating the need for photoresists and etching, while producing a dielectric resin with high silicon content that is resistant to cracking and has a low dielectric constant, suitable for integrated circuits.
Implementation Method 1
exposing a first portion of the first layer of the dielectric precursor composition to radiation in a first image-wise manner to generate acid in the first portion exposed to the radiation
Implementation Method 2
a catalyst capable of catalyzing condensation reaction of silicon-containing polymeric resin
Implementation Method 3
heating the exposed first layer to form a cured dielectric resin in a second portion of the first layer not exposed to the radiation
Data Source
AI summary
Disclosed herein is a method including forming a first layer of a dielectric precursor composition on a substrate, the dielectric precursor composition including a silicon-containing polymeric resin, a catalyst capable of catalyzing condensation reaction of silicon-containing polymeric resin, and a photoacid generator, wherein the catalyst is deactivated by the presence of acid; exposing a portion the first layer of the dielectric precursor composition to radiation in a first image-wise manner to generate acid in the portion exposed to the radiation; heating the exposed first layer to form a cured dielectric resin in a portion of the first layer not exposed to the radiation; after heating, removing the dielectric precursor composition in the portion exposed to radiation; and filling the portion where the dielectric precursor has been removed with a metal. After cure, the cured resin of the dielectric precursor composition may include greater than 42 weight percent elemental silicon.