High Voltage MOS Device Unit Pitch Reduction
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Solution Overview
Problem
Prior art high voltage MOS devices have a large unit pitch, leading to high resistance per unit area, high manufacturing costs, and low device performance.
Innovation Solution
A high voltage MOS device with a smaller unit pitch design, featuring a well region, body region, gate, source regions, drain region, and body contact region, where source regions are separated and the body contact region overlaps with multiple source regions, allowing for improved layout efficiency and reduced resistance per unit area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the prior art MOS device layout is used with parallel N type source and P type body contact region, then the device structure is simple, but the unit pitch is large leading to high resistance per unit area
Solution Approach 1:
The body contact region is extended in the width direction to overlap with multiple source regions, transitioning from a one-dimensional parallel arrangement to a two-dimensional overlapping layout. This dimensional change reduces the unit pitch in the lateral direction while maintaining electrical connectivity, thereby reducing resistance per unit area without significantly increasing structural complexity
Solution Approach 2:
The body contact region is merged to overlap with multiple source regions simultaneously, combining multiple electrical pathways into a single integrated contact structure. This merging approach reduces the overall unit pitch and resistance by creating parallel current paths through the overlapping region, while avoiding the need for separate contact structures for each source region
2Manufacturing precision
If the unit pitch is reduced in the new design, then the resistance per unit area is reduced, but the manufacturing process becomes more complex
Solution Approach 1:
The body contact region is segmented into multiple functional zones: a first region overlapping with source regions for electrical contact, and a second region extending in the width direction for additional connectivity. This segmentation allows the complex overlapping structure to be manufactured through staged processing steps, reducing manufacturing difficulty while maintaining the low-resistance benefit
Solution Approach 2:
The body contact region is formed to overlap with source regions in advance during the manufacturing process, before final device assembly. This preliminary formation of the overlapping contact structure simplifies subsequent processing steps and reduces the complexity of achieving the desired low-resistance configuration during later manufacturing stages
Data Source
AI summary
A high voltage MOS device includes: a well region with a first conductive type, a body region with a second conductive type, a gate, plural source regions with the first conductive type, a drain region with the first conductive type, and a body contact region with the second conductive type. The plural source regions contact the gate, and are substantially arranged in parallel along a width direction, and each two neighboring source regions are not contacted with each other. The body connection region extends along the width direction and overlaps with at least two of the source regions, such that the body connection region includes at least a first region and a second region, wherein the first region overlaps with at least one of the source regions, and the second region does not overlap any of the regions. The contact region does not contact the gate along a lateral direction.