High-Z Coating for Semiconductor Profile Scan Contrast
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Solution Overview
Problem
Current electron microscope techniques struggle to generate sufficient contrast for critical dimension measurements of semiconductor structures formed beneath or above the surface of a wafer, due to significant depth differences, resulting in low contrast and inaccurate measurements.
Innovation Solution
Applying a high atomic number material on the semiconductor structure surfaces, which scatters electrons more intensely than the wafer materials, enhancing the backscattered electron signal and contrast in microscope scans for more accurate critical dimension analysis.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional electron microscope techniques are used to inspect semiconductor structures at different depths, then the inspection process can be performed, but the contrast is insufficient and measurement accuracy deteriorates
Solution Approach 1:
The patent applies a high atomic number material specifically to the semiconductor structure surfaces that are at different depths, creating a localized contrast enhancement only where needed for measurement. This selective application improves the backscattered electron signal from specific regions without requiring uniform treatment of the entire wafer, thereby resolving the contrast issue for critical dimension measurements while maintaining process efficiency.
Solution Approach 2:
The patent changes the atomic number parameter of the material applied to the semiconductor structure surfaces. By using a high atomic number material instead of conventional materials, the backscattering cross-section is increased, which directly enhances the contrast of the backscattered electron signal. This parameter change enables sufficient contrast for accurate critical dimension measurements of structures at varying depths.
2Measurement precision
If high atomic number material is applied to enhance contrast, then measurement accuracy improves, but the process complexity increases
Solution Approach 1:
The high atomic number material is applied to the semiconductor structure surfaces before the electron microscope inspection process. This preliminary action ensures that the contrast enhancement is already in place when inspection begins, eliminating the need for complex real-time contrast adjustment mechanisms or multiple inspection passes. The measurement process itself remains simple and straightforward.
3Ease of manufacture
If conventional materials are used on semiconductor surfaces, then the manufacturing process remains simple, but the electron scattering capability is insufficient for accurate measurements
Solution Approach 1:
The patent uses a composite approach by combining the existing semiconductor structure materials with a high atomic number material applied as a surface layer. This composite structure maintains the electrical and structural properties of the original semiconductor materials while adding the electron scattering capability of the high atomic number material. The result is a simple process that achieves enhanced measurement capability through material composition rather than complex structural modifications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The increased contrast allows for precise critical dimension measurements and analysis of semiconductor structures at varying depths, improving the accuracy and clarity of electron microscope images.
Implementation Method 1
The larger atoms of the high atomic number material more easily scatter electrons relative to the material(s) of the surfaces of the wafer and the semiconductor structure, which produces a higher intensity backscattered electron signal
Data Source
AI summary
A high atomic number material is applied to one or more surfaces of a semiconductor structure of a wafer. The one or more surfaces are at a depth different from a depth of a surface of the wafer. An electron beam is scanned over the semiconductor structure to cause a backscattered electron signal to be collected at a collector. A profile scan of the semiconductor structure is generated based on an intensity of the backscattered electron signal, at the collector, resulting from the high atomic number material. The high atomic number material increases the intensity of the backscattered electron signal for the one or more surfaces of the semiconductor structure such that contrast in the profile scan is increased. The increased contrast of the profile scan enables accurate critical dimension measurements of the semiconductor structure.