Hole Field Plate Depth Control via Etch Stop Layer
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Solution Overview
Problem
Semiconductor devices require higher breakdown voltage, and existing field plate structures do not consistently achieve optimal results due to variability in the depth and thickness of the hole field plate, affecting the depletion of the drift region and thus the stability and uniformity of the device.
Innovation Solution
A semiconductor device and manufacturing method incorporating a hole field plate connected to an isolation structure with a hole etch stop layer, ensuring accurate control over the depth and thickness of the field plate, which includes a first and second isolation layer, to effectively deplete the drift region and enhance breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a field plate structure is used to increase breakdown voltage, then the breakdown voltage is improved, but the depth and thickness of the hole field plate vary, affecting the depletion of the drift region and device uniformity
Solution Approach 1:
The patent applies preliminary action by forming an etch stop layer before forming the hole field plate. This etch stop layer serves as a pre-established reference that controls the depth and thickness of the subsequent hole field plate formation, ensuring consistent depletion of the drift region and uniform device performance while maintaining high breakdown voltage.
2Reliability
If the hole field plate depth is not accurately controlled, then the depletion effect of the drift region becomes inconsistent, but increasing control mechanisms adds process complexity
Solution Approach 1:
The patent uses an etch stop layer as an intermediary element between the isolation structure and the hole field plate. This intermediary layer simplifies the control of hole field plate depth by providing a clear etching termination point, ensuring consistent drift region depletion without significantly increasing overall process complexity.
3Manufacturing precision
If the hole field plate is too deep or too shallow, then the expected depletion effect is not achieved, but adjusting depth requires rework of the manufacturing process
Solution Approach 1:
The etch stop layer is formed in advance as a reference structure that dictates the precise position of the hole field plate. This preliminary action ensures accurate depth control during hole field plate formation, eliminating the need for subsequent process adjustments or rework while maintaining manufacturing ease.
Data Source
AI summary
A semiconductor device and method for manufacturing same. The semiconductor device comprises: a drift region (120); an isolation structure (130) contacting the drift region (120), the isolation structure (130) comprising a first isolation layer (132), a hole etch stop layer (134) on the first isolation layer (132), and a second isolation layer (136) on the hole etch stop layer (134); and a hole field plate (180) provided above the hole etch stop layer (134) and contacting the hole etch stop layer (134).