Semiconductor Devices TRIZ Cases

Nanorods in the buffer layer reduce total internal reflection, improving light extraction efficiency while minimizing crystal defects.

A nitride semiconductor light emitting device uses recesses in the electron blocking layer to enhance hole injection efficiency.

A transparent conductive oxide layer spreads current across a thin n-type GaN region in III-nitride light emitting devices.

A self-aligned process forms a laminated metal gate electrode on silicon pillars to reduce parasitic capacitance.

An etch stop layer in the isolation structure controls hole field plate depth, ensuring stable drift region depletion and uniform breakdown voltage.

Holes in the transparent conductive layer above the P-type electrode reduce light absorption, increasing LED light extraction efficiency.

Vertical field effect transistors employ III-V compound semiconductors with distinct upper source and drain regions to minimize drain leakage currents.

A semiconductor device incorporates a low concentration region adjacent to the field limit area to expand the depletion layer.

Segmented superlattices resolve crystalline quality trade-offs to enable efficient vertical deep ultraviolet light extraction.

Segmented insulating layers enable narrower wafer streets, preventing component detachment during dicing.

Inverted flip-chip LED structure connects electrodes to non-conductive substrate for efficient thermal management.

Distinct electrode materials and thicknesses enhance light output efficiency while reducing fabrication complexity.

Optical solid state prepolymer combines epoxy resin with oligomeric silsesquioxane to create transparent thermosetting materials.

Dot structures on an LED package lens scatter light to resolve non-uniform distribution caused by limited emitting angles.

Segmented N-well regions under high-voltage diodes boost breakdown voltage by over 80% while preserving electrical stability of other components.

Optimized SiC trench gate structure reduces ON voltage through enhanced electron injection.

A tilted optical lens and prism structure deflects light from an LED chip to illuminate oblique regions.

A semiconductor structure uses a conductive plug with a second portion penetrating isolation to enhance electrical characteristics.

A semiconductor device with a graded doping concentration forms an acceleration electric field that reduces on-resistance and increases current density.

A pivoted magnetron sputtering process stabilizes the AlN or ZnO buffer layer on convex sapphire patterns, boosting crystallinity and light emission efficiency.

Adjustment regions modify barrier height at the semiconductor interface to resolve the trade-off between reverse withstand voltage and forward turn-on voltage.

Concentric ring-shaped semiconductor regions distribute electric field stress across a silicon carbide edge termination structure.

Femtosecond laser irradiation forms internal altered areas in sapphire substrates to guide controlled crack extension during substrate division.

Stepped oxide region maintains charge balance to reduce resistance and enhance breakdown voltage despite shallow trench isolation deviations.

An intermediate bandgap layer reduces the energy barrier between the Schottky barrier and cap layer in an InGaAlP transistor.

A laterally recessed gate electrode forms a cavity filled with a dielectric spacer to maintain electrical isolation between the gate and source drain contacts.

A light emitting device uses a frame with a communication path to inject resin, forming a covering member that exposes the element upper surface.

Edge-contact electrodes and dielectric layers improve current uniformity and heat dissipation for high-definition displays.

Transparent p-AlGaN contact layers and photonic crystals reduce absorption losses while a hemispherical lens minimizes total internal reflection.

Differential etching of mixed AlGaN and GaN layers produces sharper features that reduce internal reflection and boost light extraction.

Epitaxial germanium interdiffusion forms embedded silicon germanium stressors, inducing compressive strain to boost hole mobility in non-planar transistors.

Stair-shaped passivation layers reduce on-resistance in III-V HEMTs by minimizing source-drain overlay width without adding fabrication complexity.

Surface electrode pad contacts field insulating film over Schottky electrode outer end to isolate junction.

Segmented phosphor layers and concave structures resolve view angle inconsistency by reflecting side leakage upward.

Deep isolation layer eliminates field stop area, reducing device area while maintaining breakdown voltage.

A charge compensation component uses a gradient doping profile along its drift path to manage electric field distribution.

A lateral boundary layer with a lower refractive index reduces evanescent wave amplitude to protect mold bodies from electromagnetic radiation.

Alternating well layers with distinct band gaps stabilize emission peak intensity ratios, enabling deeper ultraviolet penetration for material curing.

A super-junction MOSFET structure integrates trench gates with internal diodes to manage electrical conduction paths.

Segmented IGBT trench gates reduce gate-collector capacitance, minimizing switching losses from delayed carrier discharge.

A gallium nitride rectifying device lowers on-resistance by controlling carrier trap density in semiconductor layers.

Epitaxial SiGe condensation forms germanium fins, eliminating GOI substrate needs and reducing fabrication complexity.

High-k dielectric layers increase the permittivity-thickness parameter to boost breakdown voltage while suppressing leakage current in InAlN/GaN devices.

A semiconductor field plate counterbalances drain charges in a transistor, reducing electric field peaks that cause detrimental trapping effects.

A PbSe/Ge heterojunction structure enables monolithic integration of SWIR, MWIR, and LWIR detectors on a single substrate.

Diamond gate electrodes reduce self-heating in GaN transistors by conducting heat away from the channel, enabling reliable operation at high temperatures.

A semiconductor device connects guard ring bottom portions via an embedded impurity region to equalize potential and suppress electric field concentration.

A porous metal layer fills concave portions in semiconductor structures during bonding.

Alternating compensation regions and drift portions lower on-resistance while maintaining blocking capability in super junction transistors.

Conductive flanges fill cavities in a multilayered doped region, reducing bottom source/drain resistance and parasitic capacitance for improved device scaling.