Optoelectronic Component Lateral Boundary Layer for Radiation Protection
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Solution Overview
Problem
Light-emitting components with light-sensitive potting materials are vulnerable to damage from short-wave electromagnetic radiation, leading to losses and inhomogeneous light distribution due to radiation escape at the sides.
Innovation Solution
An optoelectronic component design featuring a carrier with an electrically insulating mold body and a semiconductor body surrounded laterally by a multilayer structure, comprising a metallic layer and a non-metallic boundary layer with a lower refractive index, which prevents electromagnetic radiation from impinging on the mold body by promoting total internal reflection and reducing evanescent wave amplitude.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a light-sensitive potting material is used as the mold body, then the carrier provides good electrical insulation and structural support, but the mold body is damaged by short-wave electromagnetic radiation
Solution Approach 1:
A metallic layer is introduced as an intermediary between the semiconductor body and the mold body to block short-wave electromagnetic radiation. This metallic barrier prevents harmful radiation from reaching the light-sensitive potting material while allowing the mold body to maintain its structural and electrical insulation functions.
Solution Approach 2:
The patent utilizes the phenomenon of total internal reflection at the boundary layer interface to redirect electromagnetic radiation that would otherwise be harmful. By carefully designing the refractive index difference and layer thickness, radiation is reflected back into the semiconductor body where it can be beneficially reused, converting a harmful effect into a useful one.
2Illumination intensity
If the mold body is made transparent or translucent, then light extraction is improved, but electromagnetic radiation escapes at the sides leading to light losses and inhomogeneous color distribution
Solution Approach 1:
The metallic layer serves as an intermediary that selectively blocks harmful short-wave radiation while the boundary layer with its specific refractive index acts as an intermediary to control the direction of light extraction. This combination maintains the transparency benefits while preventing lateral escape of light.
Solution Approach 2:
The patent applies different optical properties to different regions: the boundary layer has a specific refractive index optimized for total internal reflection at lateral interfaces, while the mold body maintains its transparent or translucent properties for light extraction. This local optimization of optical properties resolves the contradiction between light extraction and lateral escape.
3Reliability
If a multilayer structure with boundary layer and metallic layer is added, then radiation protection and light efficiency are improved, but device complexity increases
Solution Approach 1:
The protective structure is segmented into distinct functional layers: a boundary layer with specific refractive index for controlling light direction through total internal reflection, and a metallic layer for blocking harmful radiation. This segmentation allows each layer to be optimized for its specific function while maintaining overall simplicity through clear functional separation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances light efficiency by minimizing radiation loss and protecting the mold body from degradation, ensuring homogeneous light distribution and prolonged component lifespan.
Implementation Method 1
an amplitude of an evanescent wave, which is obtained in the event of total internal reflection at an interface between the boundary layer and the semiconductor body, is reduced to less than 37% of its original value within the boundary layer
Data Source
AI summary
An optoelectronic component includes a boundary layer is arranged between a semiconductor body and a metallic layer in a lateral direction, adjoins the semiconductor body at least in places, covers an active layer laterally, and has a lower refractive index compared to the semiconductor body, a metallic layer is configured to prevent the electromagnetic radiation generated during operation of the component and passes through the boundary layer from impinging on a mold body, the boundary layer is formed from a radiation-transmitting dielectric material having a refractive index of 1 to 2, and a layer thickness of the boundary layer is at least 400 nm and selected such that an amplitude of an evanescent wave, which is obtained in the event of total internal reflection at an interface between the boundary layer and the semiconductor body, is reduced to less than 37% of its original value within the boundary layer.


