LED Package Edge Electrode Current Spreading
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Solution Overview
Problem
High-power LEDs face challenges in achieving uniform current spreading and efficient heat dissipation, which are crucial for high-definition display applications and reducing power consumption.
Innovation Solution
The implementation of a light emitting device (LED) structure with a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a substrate, where a dielectric layer covers the edges of the semiconductor layers and electrodes are formed to enhance current spreading and thermal characteristics, allowing for one wire-bonding packaging and wide-area heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If high-power LED array is used for high-definition display application, then brightness and display quality are improved, but heat dissipation becomes more difficult and power consumption increases
Solution Approach 1:
The patent transitions from conventional point-contact electrode structures to edge-contact electrode structures, utilizing the peripheral dimension of the semiconductor layer. The electrode is formed at the edge of the semiconductor layer rather than at the center, creating a new spatial arrangement that enables improved current spreading and heat dissipation pathways along the edges of the device structure.
Solution Approach 2:
The patent divides the electrode structure into multiple segments: a first electrode at the edge of the first conductivity type semiconductor layer, and a second electrode at the edge of the second conductivity type semiconductor layer. This segmentation allows independent optimization of current injection and heat dissipation pathways, resolving the contradiction between brightness generation and heat management.
2Ease of manufacture
If conventional electrode structure is used, then manufacturing is simpler, but current spreading is non-uniform and power consumption increases
Solution Approach 1:
The patent applies different structural qualities to different regions of the semiconductor device. The edge regions are equipped with electrodes for optimized current injection, while the bulk regions maintain their semiconductor properties. This local differentiation enables uniform current spreading without requiring complete restructuring of the entire device, balancing manufacturing feasibility with energy efficiency.
3Area of stationary object
If large-area chip is used, then heat dissipation area is increased, but current spreading becomes non-uniform without isolation structure
Solution Approach 1:
The patent introduces a dielectric layer as an intermediary structure between the semiconductor layers and the external environment. This dielectric layer with appropriate conductivity acts as a mediator that facilitates uniform current distribution across the large-area chip while maintaining the expanded heat dissipation area. The intermediary structure enables the large chip to function with improved current spreading characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution improves current spreading and thermal characteristics, reducing unnecessary power consumption and heat dissipation, increasing the reliability and efficiency of high-power LED devices.
Implementation Method 1
a first dielectric layer covering the edges of the second conductivity type semiconductor layer and the active layer
Implementation Method 2
Light emitting devices (LEDs) are semiconductor devices that convert a current into light
Implementation Method 3
a first electrode layer covering the edge of the first conductivity type semiconductor layer
Data Source
AI summary
A light emitting device (LED) and Package of the same are provided. The LED comprises a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a first dielectric layer, and a first electrode layer. The first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are on a substrate. The first dielectric layer covers the edges of the second conductivity type semiconductor layer and the active layer. The first electrode layer covers the edge of the first conductivity type semiconductor layer.