Stair-Shaped Passivation Layer for III-V HEMT On-Resistance Reduction
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Solution Overview
Problem
Current semiconductor technologies face challenges in reducing the on-resistance of III-V semiconductor compound-based high electron mobility transistors (HEMTs), which affects their performance and efficiency, particularly due to the complexity and cost associated with circuit design and manufacturing processes.
Innovation Solution
The semiconductor structure incorporates a buffer layer with a stair-shaped passivation layer configuration, reducing the overlaying length between the source/drain regions and the gate, achieved through epitaxial growth and specific material compositions like aluminum nitride and gallium nitride, allowing for self-aligned processing without additional photoresists or hard masks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional HEMT structures are used, then device performance is maintained, but on-resistance remains high affecting efficiency
Solution Approach 1:
The patent applies local quality by creating a stair-shaped passivation layer configuration with varying thicknesses in different regions. The passivation layer has multiple levels (first, second, and third portions) with different thicknesses positioned at specific locations to optimize electrical characteristics locally while maintaining overall device performance
Solution Approach 2:
The patent introduces a vertical dimensionality change by creating a stair-shaped passivation layer structure with multiple height levels. This three-dimensional configuration allows for reduced on-resistance by optimizing the overlaying length between source/drain regions and gate in the vertical dimension without compromising device reliability
2Manufacturing precision
If additional photoresists or hard masks are used for self-aligned processing, then manufacturing precision is improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent implements self-service by designing a structure where the passivation layer itself serves as the alignment reference for source/drain region formation. The stair-shaped configuration with distinct thickness levels provides inherent self-alignment, eliminating the need for additional photoresist or hard mask layers and simplifying the fabrication process while maintaining manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly reduces the on-resistance of the semiconductor structure, enhancing performance and reducing manufacturing costs by minimizing the overlaying width and complexity in the fabrication process.
Implementation Method 1
achieved through epitaxial growth and specific material compositions like aluminum nitride and gallium nitride
Data Source
AI summary
Present disclosure provides a method for manufacturing a semiconductor device, including providing a substrate, forming a first III-V compound layer over the substrate, forming a first passivation layer over the first III-V compound layer, forming a first opening from a top surface of the first passivation layer to the first III-V compound layer, each opening having a stair-shaped sidewall at the first passivation layer, depositing a metal layer over the first passivation layer and in the first opening, the metal layer having a second opening above the corresponding first opening, and removing a portion of the metal layer to form a source electrode and a drain electrode.